Resources Contact Us Home
Method of and apparatus for measuring lifetime of carriers in semiconductor sample

Image Number 5 for United States Patent #5760597.

In addition to microwave and excitation light, bias light as well is irradiated upon a surface of a semiconductor sample that is passivated using a solution which contains an electrolyte. Irradiation of the bias light increases the quantity of ionic substances that exist in the solution, largely changes a surface potential of the semiconductor sample, and suppresses surface recombination. This makes it possible to measure the lifetime of carriers which exist within the semiconductor sample at a high accuracy, without influenced by surface recombination.

  Recently Added Patents
Automated security analysis for federated relationship
Transferring a document
Systems and methods for DC-to-DC converter control
Compounds for the reduction of .beta.-amyloid production
Charged particle source with integrated electrostatic energy filter
Electrical event detection device and method of detecting and classifying electrical power usage
Method and apparatus for feeding a polyurethane mixture into hollow bodies
  Randomly Featured Patents
Design and implementation device for real-time controllers
Low viscosity polymer polyols with improved dispersion stability
Device for the formation of croissants made of puff pastry or the like
Methods for vaccinating against malaria
Substituted indazole derivatives active as kinase inhibitors
Method and apparatus for the manufacture of duckbill valves
Narrow lateral waveguide laser
Motor-assist gurney unit and method
Collapsible seat
Combination display assembly and living plant package and method of packaging same