Resources Contact Us Home
Method of and apparatus for measuring lifetime of carriers in semiconductor sample

Image Number 5 for United States Patent #5760597.

In addition to microwave and excitation light, bias light as well is irradiated upon a surface of a semiconductor sample that is passivated using a solution which contains an electrolyte. Irradiation of the bias light increases the quantity of ionic substances that exist in the solution, largely changes a surface potential of the semiconductor sample, and suppresses surface recombination. This makes it possible to measure the lifetime of carriers which exist within the semiconductor sample at a high accuracy, without influenced by surface recombination.

  Recently Added Patents
Adjustable voltage regulator with dynamic voltage compensation
Specializing disambiguation of a natural language expression
Defect inspection method and device therefor
Nuclear fission reactor, a vented nuclear fission fuel module, methods therefor and a vented nuclear fission fuel module system
System for thermally controlling displays
Trimming circuit and semiconductor device
Method of operating a split gate flash memory cell with coupling gate
  Randomly Featured Patents
Casket bed frame assembly
Bolt-nut fastening mechanism
Sensor and method for measuring web moisture with optimal temperature insensitivity over a wide basis weight range
Methods for forming selectively deposited thin films
Carrier head with a removable retaining ring for a chemical mechanical polishing apparatus
Dispensing device for parking lot
Combined air foil and loading ramp for pickup truck
In-line exhaust system for a transverse mounted v-engine
Article comprising a thin film transistor with low conductivity organic layer
1,4-bis-(amino-hydroxyalkylamino)-anthraquinones for inhibiting protein kinase C