Resources Contact Us Home
Method of and apparatus for measuring lifetime of carriers in semiconductor sample

Image Number 5 for United States Patent #5760597.

In addition to microwave and excitation light, bias light as well is irradiated upon a surface of a semiconductor sample that is passivated using a solution which contains an electrolyte. Irradiation of the bias light increases the quantity of ionic substances that exist in the solution, largely changes a surface potential of the semiconductor sample, and suppresses surface recombination. This makes it possible to measure the lifetime of carriers which exist within the semiconductor sample at a high accuracy, without influenced by surface recombination.

  Recently Added Patents
Bid optimization in search engine marketing
Radio frequency splitter
Apparatus and method for storing event information for an HVAC system
Concentrating photovoltaic system module with actuator control
Method and apparatus for controlling a multi-node process
Power semiconductor module
Modification of an object replica
  Randomly Featured Patents
Engine-mounting bracket
Apparatus and method for monitoring and controlling a device under test
Display device and shift register array for driving a pixel array
Pocket elevator
Steelmaking degassing apparatus
Fluidized bed mass burner for solid waste
Audio video reproduction apparatus, audio video reproduction method, program, and medium
Zero-clearance ultra-high-pressure gas compressor
Single parity bit generation circuit
Push-in locking joint for small diameter tubes