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Voltage generation circuit that can stably generate intermediate potential independent of threshold voltage










Image Number 4 for United States Patent #5757225.

A voltage generation circuit includes: a first MOS transistor connected between a first power supply node and an output node, and operating in a source follower mode; a second MOS transistor connected between the output node and a second power supply node, and operating in a source follower mode; and a voltage generation section using a voltage on a third power supply node having a level greater than two times a voltage from the output node and a voltage VBB on a fourth power supply node receiving a voltage lower than a measurement reference voltage of the voltage of the output node for generating and providing to the gates of the first and second MOS transistors first and second voltages of predetermined voltage levels. The voltage generation circuit can generate a voltage of a predetermined level stably even at power supply voltage with low power consumption.








 
 
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