Resources Contact Us Home
Process for global planarization of memory and globally planarized memory

Image Number 2 for United States Patent #5731234.

A process for the global planarization of a memory circuit and globally planarized memory. The process includes defining a memory cell circuit area and a peripheral circuit area on a silicon substrate. A memory cell MOS transistor is formed in the memory cell circuit area and at least two peripheral circuit MOS transistors are formed in the peripheral circuit area. A memory cell electronic component is then formed in the memory cell circuit area and in the peripheral circuit area from a plurality of thin film layers. The thin film layers are defined in the peripheral circuit area such that an open circuit is formed between the thin film layers and the peripheral circuit MOS transistors. A planarized insulating layer is then formed on top of the silicon substrate.

  Recently Added Patents
Device and method for performing optical navigation without using lenses
Cartridge unit and trap for sewer gas and odor containment
Method for generating image data of an object under examination, projection data processing device, X-ray system and computer program
Method and system for providing coordinated checkpointing to a group of independent computer applications
Display panel or screen with graphical user interface
Polyester film and method for producing same, backsheet for solar cell, and solar cell module
Storage medium storing image conversion program and image conversion apparatus
  Randomly Featured Patents
Circuit for generating a reference voltage with compensation of the offset voltage
Air missile provided with at least one releasable power unit
Light-sensitive recording element and process of forming a relief image wherein the recording element contains lecithin as an additive
Portable tool and work management data collection system
Perdeuterated polyiimides, their process of preparation and their use as materials which are transparent within the region from 2500 to 3500cm.sup.-1
Method and apparatus for melt level detection in czochralski crystal growth systems
Shorting pad having a flexible conductive sheet
Publication of informational messages to software applications in a computing environment
Steroidal [16.alpha.,17-d]isoxazolidines
Acid-labile polymer and resist composition