Image Number 2 for United States Patent #5731234.
A process for the global planarization of a memory circuit and globally planarized memory. The process includes defining a memory cell circuit area and a peripheral circuit area on a silicon substrate. A memory cell MOS transistor is formed in the memory cell circuit area and at least two peripheral circuit MOS transistors are formed in the peripheral circuit area. A memory cell electronic component is then formed in the memory cell circuit area and in the peripheral circuit area from a plurality of thin film layers. The thin film layers are defined in the peripheral circuit area such that an open circuit is formed between the thin film layers and the peripheral circuit MOS transistors. A planarized insulating layer is then formed on top of the silicon substrate.