Resources Contact Us Home
Method for forming twin well

Image Number 7 for United States Patent #5661067.

An improved twin well formation method for a semiconductor device capable of improving the latch-up characteristic in DRAM device which requires a high integration density and of improving a recess problem which occurs due to the capacitor, which includes the steps of a first step which forms an insulation film on a semiconductor substrate having a first region and a second region; a second step which forms a first temporary film on an insulation film of the first region; a third step which forms a first side wall spacer at the first temporary side wall; a fourth step which implants a first conductive ion to a substrate of a second region; a fifth step which forms a second temporary film on a substrate of the second region; a sixth step which removes the first temporary film; a seventh step which implants a second conductive ion to a substrate of the first region; and an eighth step which anneals and removes the second temporary film and the first insulation spacer.

  Recently Added Patents
Stowable pet leash and collar
Lamination sheet
Apparatus, system, and method for non-interruptively updating firmware on a redundant hardware controller
Power surface mount light emitting die package
Rechargeable battery
Self-diagnostic method and system for implantable cardiac device
  Randomly Featured Patents
Method of prefetching data in hard disk drive, recording medium including program to execute the method, and apparatus to perform the method
Streak suppression filter for use in computed tomography systems
Cellular phone battery charger
Gravy boat
Displaying stacked bar charts in a limited display area
Process for producing hexafluoroethane and use thereof
Manual relief gas vent
Service and information management system for a telecommunications network
Vibration isolating apparatus and vibration isolating table
In vivo cellular tracking