Resources Contact Us Home
Method for forming twin well

Image Number 6 for United States Patent #5661067.

An improved twin well formation method for a semiconductor device capable of improving the latch-up characteristic in DRAM device which requires a high integration density and of improving a recess problem which occurs due to the capacitor, which includes the steps of a first step which forms an insulation film on a semiconductor substrate having a first region and a second region; a second step which forms a first temporary film on an insulation film of the first region; a third step which forms a first side wall spacer at the first temporary side wall; a fourth step which implants a first conductive ion to a substrate of a second region; a fifth step which forms a second temporary film on a substrate of the second region; a sixth step which removes the first temporary film; a seventh step which implants a second conductive ion to a substrate of the first region; and an eighth step which anneals and removes the second temporary film and the first insulation spacer.

  Recently Added Patents
Electronic hand-held device
Image manipulating system and method
Multistable electromagnetic actuators
Food safety printer
Expandable mobile device
DNA promoters and anthrax vaccines
Light emitting device power supply circuit, and light emitting device driver circuit and control method thereof
  Randomly Featured Patents
Computing and printing scale
Barge-carrying ship
Conference support apparatus and conference support method
Carton opening apparatus
Apparatus for managing software bending machines
Magnetic material and manufacturing method thereof, and bonded magnet using the same
GaP light emitting element substrate with oxygen doped buffer
Component with bonding adhesive
Methods of synchronizing subscriber stations to communications networks
Extension platform to support transparencies for an overhead projector