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Multi-layer gate structure

Image Number 3 for United States Patent #5635765.

A method of forming a multi-layer silicide gate structure for a MOS type semiconductor device that includes the processing steps of first providing a substrate, then depositing a gate oxide layer on the substrate, then depositing a first refractory metal silicide layer which has a first stoichometry on the gate oxide layer, and finally depositing a second refractory metal silicide layer which has a second stoichometry different than the first stoichometry on the first deposited refractory metal silicide layer.

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