Resources Contact Us Home
Method of making SOI Transistor

Image Number 14 for United States Patent #5580797.

A lateral bipolar transistor capable of forming a narrow-sized diffusion region, such as a base width, is disclosed. The transistor exhibits no scattering in the direction of the depth of the width of the diffusion region. Emitter resistance is reduced by varying an impurity diffusion source at substantially a uniform concentration in a semiconductor portion and forming a diffusion region by diffusion from the impurity diffusion source. The bipolar transistor has an SOI structure. A method of making such device is also disclosed.

  Recently Added Patents
Once daily formulations of tetracyclines
Rechargeable battery
Optimized delivery of web application code
Determination of copy number variations using binomial probability calculations
Random access point (RAP) formation using intra refreshing technique in video coding
Method for processing power headroom and terminal thereof
System and method for secure power systems infrastructure communications
  Randomly Featured Patents
Protective element
Zero-crossing correction in sinusoidally commutated motors
Flat tubes for use with heat exchanger and manufacturing method thereof
Magnetic sensor comprising laminated sheets having magnetic body surrounded by coil pattern
Snap-on fastener
Apparatus for and method of testing diesel engine heads for fuel and/or collant leaks
Automobile rear light multiple function display with a plurality of miniature lamps
Vehicle mounted satellite antenna embedded within moonroof or sunroof
Inductively sensed magnetic memory manufacturing method