Resources Contact Us Home
Method of making SOI Transistor

Image Number 14 for United States Patent #5580797.

A lateral bipolar transistor capable of forming a narrow-sized diffusion region, such as a base width, is disclosed. The transistor exhibits no scattering in the direction of the depth of the width of the diffusion region. Emitter resistance is reduced by varying an impurity diffusion source at substantially a uniform concentration in a semiconductor portion and forming a diffusion region by diffusion from the impurity diffusion source. The bipolar transistor has an SOI structure. A method of making such device is also disclosed.

  Recently Added Patents
Assay cartridges and methods of using the same
Semiconductor device
Routing of contacts based on predicted escalation time
Electrifying roller
Closure for a pipeline pig sender or receiver
Nonvolatile memory device, programming method thereof and memory system including the same
Camera platform for 3-D photography
  Randomly Featured Patents
Reflective liquid crystal display device
Temperature control using a sensor network
System and method for interference cancellation in a wireless communication receiver
Method and device to regulate an automated manipulator
Aluminum nitride sintered body and method of evaluation for the same
Apparatus and method in a network interface device for storing receiving frame status in a holding register
Method of and system for providing services in a communications network
Bicycle bottom bracket assembly
Method and device for recognizing optical splitter and optical splitter ports
Shaft mounting device and method