Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method of making SOI Transistor










Image Number 14 for United States Patent #5580797.

A lateral bipolar transistor capable of forming a narrow-sized diffusion region, such as a base width, is disclosed. The transistor exhibits no scattering in the direction of the depth of the width of the diffusion region. Emitter resistance is reduced by varying an impurity diffusion source at substantially a uniform concentration in a semiconductor portion and forming a diffusion region by diffusion from the impurity diffusion source. The bipolar transistor has an SOI structure. A method of making such device is also disclosed.








 
 
  Recently Added Patents
Image processing apparatus, image registering method, program causing computer to execute image registering method, and recording medium in which program is recorded
Method for production of fermentable sugars from biomass
Method and system for utilizing native ethernet as a virtual memory interconnect
Sink
Bi-directional switch using series connected N-type MOS devices in parallel with series connected P-type MOS devices
Dynamic web page construction based on determination of client device location
Automated hotfix handling model
  Randomly Featured Patents
Recovery from a hang condition in a data processing system
Controlled degradation of polymer based aqueous gels
Optical device and method of manufacture
Plane color image scanning and reading method
Method and apparatus for recovering copper and regenerating ammoniacal etchant from spent ammoniacal etchant
Liquid crystal light valve showing an improved display contrast
Penetrating instrument having an expandable anchoring portion for triggering protrusion of a safety member and/or retraction of a penetrating member
Object relationship management system
Mobile phone
Tripeptide compounds having a nitrogenous polycyclic structure