Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method of making SOI Transistor










Image Number 14 for United States Patent #5580797.

A lateral bipolar transistor capable of forming a narrow-sized diffusion region, such as a base width, is disclosed. The transistor exhibits no scattering in the direction of the depth of the width of the diffusion region. Emitter resistance is reduced by varying an impurity diffusion source at substantially a uniform concentration in a semiconductor portion and forming a diffusion region by diffusion from the impurity diffusion source. The bipolar transistor has an SOI structure. A method of making such device is also disclosed.








 
 
  Recently Added Patents
Liquid dispensing apparatus
Container
Device and method for quantizing and inverse quantizing LPC filters in a super-frame
Method for manufacturing a magnet coil configuration using a slit band-shaped conductor
Method and system for providing an intelligent visual scrollbar position indicator
Method and apparatus for monitoring and/or controlling the curing of cements used in medical procedures
Crowd control barrier II
  Randomly Featured Patents
Packaging method for modular power cells
Screw tightening apparatus
Powdered niobium, sintered body thereof, capacitor using the sintered body and production method of the capacitor
Methods of forming electronic devices including high-k dielectric layers and electrode barrier layers and related structures
Sit to stand hinged seat walker with pull-up handle
Modular multi-purpose switch
Sulky with damper
Aerosol system
Apparatus for sterilizing a medical unit
Process for reversibly absorbing acid gases from gaseous mixtures