Resources Contact Us Home
Method of making SOI Transistor

Image Number 14 for United States Patent #5580797.

A lateral bipolar transistor capable of forming a narrow-sized diffusion region, such as a base width, is disclosed. The transistor exhibits no scattering in the direction of the depth of the width of the diffusion region. Emitter resistance is reduced by varying an impurity diffusion source at substantially a uniform concentration in a semiconductor portion and forming a diffusion region by diffusion from the impurity diffusion source. The bipolar transistor has an SOI structure. A method of making such device is also disclosed.

  Recently Added Patents
Methods for detecting DNA-binding proteins
Method and apparatus for representing sensory effects and computer readable recording medium storing user sensory preference metadata
Acoustic measuring instrument
Methods and system for providing drug pricing information from multiple pharmacy benefit managers (PBMs)
Micromachined devices and fabricating the same
Protein kinase C inhibitors and uses thereof
Validating the configuration of distributed systems
  Randomly Featured Patents
Centrifuges, centrifuge plants and flow control arrangements therefor
Compositions containing organic-soluble xanthene dye photoinitiators
Wavelength locked laser including integrated wavelength selecting total internal reflection (TIR) structure
Pulse modulator for nonradiative dielectric waveguide, and millimeter wave transmitter/receiver using the same
Air belt apparatus
Heat exchange belt conveying apparatus, in particular for thin sheet products and the like
Display rack
Two-arm belt tensioner for a belt drive
Dual channel multi-spectrum infrared optical fire and explosion detection system
Method and apparatus for stimulating oil well production