Resources Contact Us Home
Method of making SOI Transistor

Image Number 14 for United States Patent #5580797.

A lateral bipolar transistor capable of forming a narrow-sized diffusion region, such as a base width, is disclosed. The transistor exhibits no scattering in the direction of the depth of the width of the diffusion region. Emitter resistance is reduced by varying an impurity diffusion source at substantially a uniform concentration in a semiconductor portion and forming a diffusion region by diffusion from the impurity diffusion source. The bipolar transistor has an SOI structure. A method of making such device is also disclosed.

  Recently Added Patents
Method of fabricating solid electrolytic capacitor and solid electrolytic capacitor
Printing control method and printer for printing on a label
Method and system for monitoring service quality in a mobile node
High voltage fast recovery trench diode
Generating a funding and investment strategy associated with an underfunded pension plan
Method for producing lactamates by way of thin film evaporation
  Randomly Featured Patents
Artificial fingernails and method of application
Correction method of feeding amount of conveyance belt and inkjet recording apparatus using the method
Charging and distributing device for two-stroke engine
Optical recording carrier having groove wobble phase changes between subsequent predetermined positions
Data encoding mark for placement in a compact area and an object carrying the data encoding mark
Shaving compositions containing particulate additives
Method and device for determining position of dental implants
Novel penten-2-yl-derivatives
Off-road truck suspended with rubber spring device
Process for producing non-flammable phenolic resin foam