Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method of making SOI Transistor










Image Number 14 for United States Patent #5580797.

A lateral bipolar transistor capable of forming a narrow-sized diffusion region, such as a base width, is disclosed. The transistor exhibits no scattering in the direction of the depth of the width of the diffusion region. Emitter resistance is reduced by varying an impurity diffusion source at substantially a uniform concentration in a semiconductor portion and forming a diffusion region by diffusion from the impurity diffusion source. The bipolar transistor has an SOI structure. A method of making such device is also disclosed.








 
 
  Recently Added Patents
Method and system for simulating wireless networks
Integrated circuit devices having conductive structures with different cross sections
Device for transmitting data between a serial data bus and working modules such as actuator modules and/or I/O modules
Note tab
Active element machine computation
Data processor and scanner device
Piano keyboard with key touch point detection
  Randomly Featured Patents
Control circuit of synchronous rectification type power supply unit, synchronous rectification type power supply unit and control method thereof
Pull-down detection apparatus and pull-down detection method
Compressive sampling and signal inference
Projectile receiver for duct pipe testing
Liquid crystal display panel and electronic apparatus
Magnetic-field modulation recording method and device for preventing residual information from remaining after overwriting
Treatment of the vertebral column
Mobile structure
Vehicle control system
Brake actuator and brake pad