Resources Contact Us Home
Method of making SOI Transistor

Image Number 14 for United States Patent #5580797.

A lateral bipolar transistor capable of forming a narrow-sized diffusion region, such as a base width, is disclosed. The transistor exhibits no scattering in the direction of the depth of the width of the diffusion region. Emitter resistance is reduced by varying an impurity diffusion source at substantially a uniform concentration in a semiconductor portion and forming a diffusion region by diffusion from the impurity diffusion source. The bipolar transistor has an SOI structure. A method of making such device is also disclosed.

  Recently Added Patents
Unsupervised document clustering using latent semantic density analysis
Method for execution upon processing of at least one histological sample
System, method, and computer readable medium for a force-based wheelchair joystick
Non-volatile memory array and device using erase markers
Plasmon generator includes three metal layers for thermally-assisted magnetic recording
Image display device and display unit for image display device
  Randomly Featured Patents
Housing for ceramic heat recuperators and assembly
Integrated circuit device, semiconductor memory, and integrated circuit system coping with high-frequency clock signal
Device for conveying insulating glass panes
Document feeder with removable belt unit
Silver halide light-sensitive material
Multi-modal wearable baby carrier
System with electrolytic cell and method for producing heat and reducing radioactivity of a radioactive material by electrolysis
Dispenser with integral separator for removing a backing from a self-adhesive article
Woven rope