Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method of making SOI Transistor










Image Number 14 for United States Patent #5580797.

A lateral bipolar transistor capable of forming a narrow-sized diffusion region, such as a base width, is disclosed. The transistor exhibits no scattering in the direction of the depth of the width of the diffusion region. Emitter resistance is reduced by varying an impurity diffusion source at substantially a uniform concentration in a semiconductor portion and forming a diffusion region by diffusion from the impurity diffusion source. The bipolar transistor has an SOI structure. A method of making such device is also disclosed.








 
 
  Recently Added Patents
Gaming device providing an award based on a count of outcomes which meets a condition
Toothbrush
Multiple purpose tandem nested projectile
High sensitivity sensor device and manufacturing thereof
Method and apparatus for managing multimedia content
Masonry building block and interlocking wall system incorporating such blocks
Toroidal ion trap mass analyzer with cylindrical electrodes
  Randomly Featured Patents
Method of measuring oxygen and process for pretreating a solid electrolyte oxygen gas sensing element
Imaging optical system
Vector floating point unit
Method and apparatus for optimizing optical system and recording medium with program for optimizing optical system
Bony anchor extender
Image processing device displaying jobs in two areas of display
Method and system for communicating fixed IP address based voice data in a dynamic IP address based network environment
Flexible printed circuit board, method of fabricating the flexible printed circuit board, and display device having the flexible printed circuit board
Apparatus and method for radially expanding and plastically deforming a tubular member
Multi-state query migration in data stream management