Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method of making SOI Transistor










Image Number 14 for United States Patent #5580797.

A lateral bipolar transistor capable of forming a narrow-sized diffusion region, such as a base width, is disclosed. The transistor exhibits no scattering in the direction of the depth of the width of the diffusion region. Emitter resistance is reduced by varying an impurity diffusion source at substantially a uniform concentration in a semiconductor portion and forming a diffusion region by diffusion from the impurity diffusion source. The bipolar transistor has an SOI structure. A method of making such device is also disclosed.








 
 
  Recently Added Patents
Positioning vehicles to improve quality of observations at intersections
Apparatus for generating electrical energy from rocking activated energy
Data driver and liquid crystal display device using the same
Substituted thiophene pentamers
Network attachment for IMS systems for legacy CS UE with home node B access
Method of modified facies proportions upon history matching of a geological model
Context-sensitive views
  Randomly Featured Patents
Digester screen for a continuous cellulose pulp digester
Circuits and methods for noise management in systems including an asynchronously-operable data port
Method, apparatus, and system for time synchronization
Pharmaceutical compositions for the treatment of skin disorders
Hazardous environment suit
Pocketed spring assembly
Hydronic heating water temperature control system
Thermal processes for subsurface formations
Foot brace and leveraged turning apparatus for surfboards
2-(alkyl-cyclo)-1-propanol, a process for preparing the same and perfumery composition containing the same