Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method of making SOI Transistor










Image Number 14 for United States Patent #5580797.

A lateral bipolar transistor capable of forming a narrow-sized diffusion region, such as a base width, is disclosed. The transistor exhibits no scattering in the direction of the depth of the width of the diffusion region. Emitter resistance is reduced by varying an impurity diffusion source at substantially a uniform concentration in a semiconductor portion and forming a diffusion region by diffusion from the impurity diffusion source. The bipolar transistor has an SOI structure. A method of making such device is also disclosed.








 
 
  Recently Added Patents
Transfer of digital data through an isolation
Monitoring device, monitoring method and non-transitory computer readable medium
Cationic polymers for antimicrobial applications and delivery of bioactive materials
Randomly accessible visual information recording medium and recording method, and reproducing device and reproducing method
Method of controlling semiconductor device, signal processing method, semiconductor device, and electronic apparatus
Active pulse blood constituent monitoring
High power fiber amplifier with stable output
  Randomly Featured Patents
Method of providing gardening/agricultural information
Hepatitus B vaccine
Motor-compressor
Modular coupling for use in frameworks, scaffoldings and the like
Method for detecting a polypeptide which induces interferon-.gamma. production
Arrangement for securing pure skew adjustment of a plate cylinder in a sheet-fed rotary printing press
Methods for fabricating a CMOS image sensor
Device and process for producing cold and/or heat by solid-gas reaction
Air mattresses
Single user detection user equipment