Resources Contact Us Home
Method of making SOI Transistor

Image Number 12 for United States Patent #5580797.

A lateral bipolar transistor capable of forming a narrow-sized diffusion region, such as a base width, is disclosed. The transistor exhibits no scattering in the direction of the depth of the width of the diffusion region. Emitter resistance is reduced by varying an impurity diffusion source at substantially a uniform concentration in a semiconductor portion and forming a diffusion region by diffusion from the impurity diffusion source. The bipolar transistor has an SOI structure. A method of making such device is also disclosed.

  Recently Added Patents
Electronic device
Vibration disturbance estimation and control
Soybean cultivar CL1013665
Real ear measurement system using thin tube
Managing breakpoints in a multi-threaded environment
Parallel power inverter motor drive system
Servomotor control circuit
  Randomly Featured Patents
System and a method for automatic air collision avoidance
Boot carrier
Establishing a thin client terminal services session
Heterocycles as nicotinic acid receptor agonists for the treatment of dyslipidemia
Finger operated digital input device
Holder for vehicle fire extinguisher, flare and maps
Communication unit, system and method for saving power therein
Permanent magnet drive apparatus and operational method
Computer with integral monitor
Child resistant package with tamper indicating band