Resources Contact Us Home
Method of making SOI Transistor

Image Number 12 for United States Patent #5580797.

A lateral bipolar transistor capable of forming a narrow-sized diffusion region, such as a base width, is disclosed. The transistor exhibits no scattering in the direction of the depth of the width of the diffusion region. Emitter resistance is reduced by varying an impurity diffusion source at substantially a uniform concentration in a semiconductor portion and forming a diffusion region by diffusion from the impurity diffusion source. The bipolar transistor has an SOI structure. A method of making such device is also disclosed.

  Recently Added Patents
Techniques for generating and displaying a visual flow of user content through a social network
Pet carrier
Method of making an array of nucleic acid colonies
Flat panel display device and stereoscopic display device
Fishing apparatus
Portable electric circular saw
Measurement protocol for a medical technology apparatus
  Randomly Featured Patents
Cable termination assembly with contact supporting housing and integrally molded strain relief
Remote broadcast of call announce and call screening information
Circuit arrangement for reading out sensors sensitive to light or X-rays
Method and apparatus for defining parameter transmission protocols for a call intercept/message delivery telephone system
Molded and slab polyurethane foam prepared from double metal cyanide complex-catalyzed polyoxyalkylene polyols and polyols suitable for the preparation thereof
Converter plant
Method and system for generating packet delay variation with a uniform distribution
Dry shaver
Image sensor packaging structure with predetermined focal length
Apparatus for establishing the junction contour for intersecting pipes