Resources Contact Us Home
Method of making SOI Transistor

Image Number 12 for United States Patent #5580797.

A lateral bipolar transistor capable of forming a narrow-sized diffusion region, such as a base width, is disclosed. The transistor exhibits no scattering in the direction of the depth of the width of the diffusion region. Emitter resistance is reduced by varying an impurity diffusion source at substantially a uniform concentration in a semiconductor portion and forming a diffusion region by diffusion from the impurity diffusion source. The bipolar transistor has an SOI structure. A method of making such device is also disclosed.

  Recently Added Patents
Stabilized redispersible polymer powder compositions
Manufacturing aircraft parts
Computerized apparatus for identifying industries for potential transfer of a job function
Dual protocol input device
Table base
Grounding fitting
Keyswitch controller
  Randomly Featured Patents
Method for allocating programs
Buried transistors for silicon on insulator technology
Flame-retardant polyurethane foams
Method and apparatus for a cable clamp assembly
Cyclone separator
Oscillating flux transformer
High pressure dual-action hydraulic pump
Clip and wheel flair molding assembly
Air to ground communications system and method
Contaminant extraction systems, methods, and apparatuses