Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method of making SOI Transistor










Image Number 12 for United States Patent #5580797.

A lateral bipolar transistor capable of forming a narrow-sized diffusion region, such as a base width, is disclosed. The transistor exhibits no scattering in the direction of the depth of the width of the diffusion region. Emitter resistance is reduced by varying an impurity diffusion source at substantially a uniform concentration in a semiconductor portion and forming a diffusion region by diffusion from the impurity diffusion source. The bipolar transistor has an SOI structure. A method of making such device is also disclosed.








 
 
  Recently Added Patents
Integrated advance copper fuse combined with ESD/over-voltage/reverse polarity protection
Semiconductor IC including pulse generation logic circuit
Methods and systems for automatically identifying a logical circuit failure in a data network
Anti-FGFR3 antibodies and methods using same
Intermediate film for laminated glasses, and laminated glass
UV exposure method for reducing residue in de-taping process
Micromechanical component, device for beam deflection of monochromatic light, and spectrometer
  Randomly Featured Patents
Batting instruction system
Transfer hydrogenolysis of alkylheteroaryl halo-containing compounds
Method for alloying metals having significantly different melting points
Packaged piezoelectric transformer unit
Loom harness mechanism
Lubrication of refrigerant compressor bearings
Multi-load beam apparatus to prevent improper operation due to off-axis loads
Drive system having a common control-pressure connection
Shelf mountable printing apparatus
Method of selecting portion of a graph, and network analyzing apparatus using same