Resources Contact Us Home
Method of making SOI Transistor

Image Number 12 for United States Patent #5580797.

A lateral bipolar transistor capable of forming a narrow-sized diffusion region, such as a base width, is disclosed. The transistor exhibits no scattering in the direction of the depth of the width of the diffusion region. Emitter resistance is reduced by varying an impurity diffusion source at substantially a uniform concentration in a semiconductor portion and forming a diffusion region by diffusion from the impurity diffusion source. The bipolar transistor has an SOI structure. A method of making such device is also disclosed.

  Recently Added Patents
Washing machine
Display screen with graphical user interface
Bioactive agent-loaded heart-targeting nanoparticles
Semiconductor memory device and manufacturing method thereof
Fast and compact circuit for bus inversion
Related news articles
High performance design rule checking technique
  Randomly Featured Patents
Method and device for using optical feedback to overcome bandwidth limitations caused by relaxation oscillation in vertical cavity surface emitting lasers (VCSELs)
Optical writing type liquid crystal light valve and writing apparatus therefor
Wide-swath printer/plotter using multiple printheads
Kits for amplifying and detecting nucleic acid sequences
Grain drying and conditioning apparatus
Hydraulic system and method of operating same
Process for testing operational components in heaters and testing device for this purpose
Optical disk program repeater
Water sport towing apparatus and method
Linear plasma source for dynamic (moving substrate) plasma processing