Resources Contact Us Home
Method of making SOI Transistor

Image Number 12 for United States Patent #5580797.

A lateral bipolar transistor capable of forming a narrow-sized diffusion region, such as a base width, is disclosed. The transistor exhibits no scattering in the direction of the depth of the width of the diffusion region. Emitter resistance is reduced by varying an impurity diffusion source at substantially a uniform concentration in a semiconductor portion and forming a diffusion region by diffusion from the impurity diffusion source. The bipolar transistor has an SOI structure. A method of making such device is also disclosed.

  Recently Added Patents
Nitrogen-doped carbon-supported cobalt-iron oxygen reduction catalyst
Medical capsule housing formed by thermal welding
Compatibility check
Optimization of packaging sizes
Permeable pressure sensitive adhesive
Browsing or searching user interfaces and other aspects
Method of interfacing a host operating through a logical address space with a direct file storage medium
  Randomly Featured Patents
Stabilizers for polymer/polyols
Shower head
Buffered embryo solutions
Space weather prediction system and method
Nuclear matrix protein fluid assay
Ultrasonic radial focused transducer for pulmonary vein ablation
Flash drying apparatus
Small watercraft with fin and sail
Metal contact LGA socket
Process for the preparation of alkoxyalkanoic acids