Resources Contact Us Home
Method of making SOI Transistor

Image Number 12 for United States Patent #5580797.

A lateral bipolar transistor capable of forming a narrow-sized diffusion region, such as a base width, is disclosed. The transistor exhibits no scattering in the direction of the depth of the width of the diffusion region. Emitter resistance is reduced by varying an impurity diffusion source at substantially a uniform concentration in a semiconductor portion and forming a diffusion region by diffusion from the impurity diffusion source. The bipolar transistor has an SOI structure. A method of making such device is also disclosed.

  Recently Added Patents
Optical receiver and optical transfer apparatus
Nonvolatile semiconductor storage device having conductive and insulative charge storage films
Solid-state imaging device and imaging apparatus
Base station, relay station, and bandwidth allocation method
Co-crystals of agomelatine, a process for there preparation and pharmaceutical compositions containing them
Configurable pitch reducing optical fiber array
Cardiac function management integrating cardiac contractility modulation
  Randomly Featured Patents
System combined with loadsharing structure and primary/backup structure
Absorbent articles for fluid management
Optical disk having read-only and rewritable areas with overlapping formats
Capacitively coupled driving method for TFT-LCD to compensate for switching distortion and to reduce driving power
Polarized signal receiving apparatus
Polymeric materials for medical devices
Quinophthalone compound, mixed colorant, laser ray transmitting colored resin composition, and laser-welded product
Thin film phase-change memory
Method for reducing bias error in a vibrating structure gyroscope
Cold cathode tube for generating light with uniform intensity along the tube