Resources Contact Us Home
Method for producing native oxides on compound semiconductors

Image Number 6 for United States Patent #5559058.

A method of growing a native oxide on a compound semiconductor material, comprising contacting the compound semiconductor material with an oxygen containing fluid, and pulsing a current between the compound semiconductor material the fluid, is presented. A "traveling oxide" can be produced when the oxygen containing fluid etches the native oxide. To obtain smooth oxides when the compound semiconductor material contains layers of different material, the oxide growth is monitored, and the pulse parameters changed in response to the monitoring of the oxide growth.

  Recently Added Patents
Methods for the production of aligned carbon nanotubes and nanostructured material containing the same
Location-type tagging using collected traveler data
Process for recovering and recycling an acid catalyst
Processing biomass
Semiconductor process
  Randomly Featured Patents
Compounds containing beta-lactams
Use of natriuretic peptide for treating heart failure
Computer network connector
Adaptive timing using clock recovery
Measurement of gas fuel amount
Semiconductor integrated circuit and measuring method of terminator resistor in the semiconductor integrated circuit
Percutaneous transluminal catheter and transmitter therefor
Performance testing apparatus for heat pipes
Activation of the arabidopsis hypertall (HYT1/YUCCA6) locus affects several auxin mediated responses
Methods and apparatus for thermal isolation in vertically-integrated semiconductor devices