Resources Contact Us Home
PE-OX/ozone-TEOS gap filling capability by selective N.sub.2 treatment on PE-OX

Image Number 3 for United States Patent #5536681.

An improved method of gap filling in the dielectric layer by performing selective N.sub.2 treatment on the PE-OX underlayer is described. Semiconductor device structures are provided in and on a semiconductor substrate. A conducting layer is deposited overlying the top surfaces of the semiconductor device structures and patterned to form conducting lines. A first silane-based oxide layer is deposited over the surfaces of the conducting layer wherein a gap is formed between portions of the patterned conducting layer. The first oxide layer is covered with a layer of photoresist which is patterned so that the portions of the first oxide layer overlying the conducting lines are not covered by the photoresist layer. The portions of the first oxide layer not covered by the photoresist layer are treated with N.sub.2 plasma. The photoresist layer is removed. A second O.sub.3 -TEOS oxide layer is deposited over the first oxide layer wherein the gap is filled by the second oxide layer and fabrication of the integrated circuit is completed.

  Recently Added Patents
Apparatus for preventing overcharge of a battery
Variety corn line LIC7382
Fluorine-free fused ring heteroaromatic photoacid generators and resist compositions containing the same
Lens module and method for manufacturing thereof
Systems and methods for controlling phasing of advancing substrates in absorbent article converting lines
Method, preprocessor, speech recognition system, and program product for extracting target speech by removing noise
  Randomly Featured Patents
Ready to wear headscarf
Image projection system with keystone correction
Double-acting vise
Blade mounting structure of bulldozer
Interactive home information system for distributing video picture information to television viewers over a fiber optic telephone system
Electronic access control system
Shield structure for electronic device
Process for filling traveling silo containers
Method for manufacturing a semiconductor ROM device
Thiazolo[3,2-6]isoquinolines, compositions and use thereof