Resources Contact Us Home
Process for producing a pressure transducer using silicon-on-insulator technology

Image Number 3 for United States Patent #5510276.

A process for producing a pressure transducer or sensor using the silicon-on-insulator method is provided. The process includes the following steps: (a) producing a monocrystalline silicon film (44) on a silicon substrate (6) at least locally separated from the latter by an insulating layer (42), (b) producing an opening (24) in the silicon film down to the insulating layer, (c) partially eliminating the insulating layer via the opening in order to form the diaphragm in the silicon film, and (d) resealing the opening (26).

  Recently Added Patents
Multiple CQI feedback for cellular networks
Battery loading and unloading mechanism
Watch dial
High damage threshold frequency conversion system
DRAM refresh method and system
Far field telemetry operations between an external device and an implantable medical device during recharge of the implantable medical device via a proximity coupling
Image processing device and information storage medium including motion vector information calculation
  Randomly Featured Patents
Suspension soap holder
Split-gate non-volatile memory cell and method
Tool mounting assembly for a surface maintenance machine
Identification member in slots in the core of an optical fiber cable
Multi-band antenna
Handle with a power-regulating device
Method for determining nucleotide identity through extension of immobilized primer
Method and unit for closing the ends of tubular wrappings on a cigarette packing machine
Automobile tire
Floor covering removal machine