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Process for producing a pressure transducer using silicon-on-insulator technology

Image Number 3 for United States Patent #5510276.

A process for producing a pressure transducer or sensor using the silicon-on-insulator method is provided. The process includes the following steps: (a) producing a monocrystalline silicon film (44) on a silicon substrate (6) at least locally separated from the latter by an insulating layer (42), (b) producing an opening (24) in the silicon film down to the insulating layer, (c) partially eliminating the insulating layer via the opening in order to form the diaphragm in the silicon film, and (d) resealing the opening (26).

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