Resources Contact Us Home
Process for producing a pressure transducer using silicon-on-insulator technology

Image Number 3 for United States Patent #5510276.

A process for producing a pressure transducer or sensor using the silicon-on-insulator method is provided. The process includes the following steps: (a) producing a monocrystalline silicon film (44) on a silicon substrate (6) at least locally separated from the latter by an insulating layer (42), (b) producing an opening (24) in the silicon film down to the insulating layer, (c) partially eliminating the insulating layer via the opening in order to form the diaphragm in the silicon film, and (d) resealing the opening (26).

  Recently Added Patents
Dual use photovoltaic system
Secure data exchange between data processing systems
Superagonistic anti-CD28 antibodies
Maize variety inbred PH1CD7
Methods and apparatus for low power out-of-band communications
Dielectric insulation medium
Cylindrical LED fixture
  Randomly Featured Patents
Osteospermum plant named `DAOSFEMTEN`
Anti-deadlock circuit and method for phase-locked loops
Data storage device and method for storing information using alternate information storage architectures
Television monitor
Implantable reservoir and system for delivery of a therapeutic agent
Vapor deposition apparatus and method
2-(substituted-amino)-benzothiazole sulfonamide HIV protease inhibitors
Optical disk apparatus with aberration correcting part, and optical disk
Block copolymer process
Bilaterally balanced fluid control valve