Resources Contact Us Home
Process for producing a pressure transducer using silicon-on-insulator technology

Image Number 3 for United States Patent #5510276.

A process for producing a pressure transducer or sensor using the silicon-on-insulator method is provided. The process includes the following steps: (a) producing a monocrystalline silicon film (44) on a silicon substrate (6) at least locally separated from the latter by an insulating layer (42), (b) producing an opening (24) in the silicon film down to the insulating layer, (c) partially eliminating the insulating layer via the opening in order to form the diaphragm in the silicon film, and (d) resealing the opening (26).

  Recently Added Patents
Light barrier and method for detecting objects
Power semiconductor module
Display window with level of service graphical user interface
Computer network running a distributed application
Tree drain grate
Process and intermediates for preparing lapatinib
Switched capacitor hold-up scheme for constant boost output voltage
  Randomly Featured Patents
Card game playing aid
Pixelated puzzle
Tube rolling device
Method of preventing leak of liquid fuel
Fault analysis method for a lambda probe
Heating and cooling blanket
Fan and fan housing with airflow-guiding stationary blades
Lamp dimmer
Preparation of cis-2,6-dimethylmorpholine
Topical medication coverings