Resources Contact Us Home
Micro-miniature structures and method of fabrication thereof

Image Number 5 for United States Patent #5364742.

In the fabrication of a free-standing miniaturized structure in a range of about 10 to 20 .mu.m thick, a method based on a sacrificial system includes the steps of selecting a substrate material, depositing on the substrate material a sacrificial layer of material and patterning the sacrificial layer to define a shape. A photoresist layer of material is deposited on the sacrificial layer and patterned by contrast-enhanced photolithography to form a photoresist mold. Upon the mold there is plated a metallic layer of material. The electroplated structure conforms to the resist profile and can have a thickness many times that of conventional polysilicon microstructures. The photoresist mold and the sacrificial layer are thereafter dissolved using etchants to form a free standing metallic structure in a range of about 10 to 20 .mu.m thick, with vertical to lateral aspect ratios of 9:1 to 10:1 or more.

  Recently Added Patents
Semiconductor device and manufacturing method thereof
System and method for data reconfiguration in an optical communication network
Methods of implanting dopant ions
Complete context search system
Battery pouch sheet edge insulation
Fabric-backplane enterprise servers with pluggable I/O sub-system
Method of preparing MgB.sub.2 superconducting wire and the MgB.sub.2 superconducting wire prepared thereby
  Randomly Featured Patents
Duct disinfecting method and apparatus
Moving light with removable circuit board
Multiple return link
Lined pipe wherein the liner comprises a one-way valve
Optical transmission tube, making method, and linear illuminant system
Copolymerized polyester compositions
Image forming apparatus including a service provider for using an external server, and a corresponding information processing system, control method and computer-readable medium
Hermetically sealed tamperproof port protector
Four-passage multifunction torque converter
Method for isomerization of fluorinated epoxy compounds