Resources Contact Us Home
Amorphous silicon memory

Image Number 8 for United States Patent #5360981.

An analogue memory device comprises a layer of doped amorphous silicon located between a first conducting layer metal contact layer of V, Co, Ni, Pd, Fe or Mn. It has been found that the selection of one of these metals as the contact exerts a significant effect on the properties of the device, e.g. the selection of Al, Au or Cu gives no switching whereas Cr, W, Ag give digital instead of analogue switching.

  Recently Added Patents
Method and apparatus for supporting delivery, sale and billing of perishable and time-sensitive goods such as newspapers, periodicals and direct marketing and promotional materials
Systems and methods for minimization or elimination of diffusion effects in a microfluidic system
Base station apparatus and method for use in mobile communication system
Power management systems and designs
Systems and methods for automated institutional processing of payments
Integrated circuit package system with bonding lands
Solar powered charging shelter and system and method thereof
  Randomly Featured Patents
Self-cleaning burner
Perfluoroalkyl benzodiazepines
Packaging of drinking straws
Slit nozzle sound signal generator
Dynamic network link acceleration
Image forming apparatus capable of judging whether it is appropriate to form an image on a sheet and controlling the image formation accordingly
Chemical sensor and coating for same
Support member for prosthesis
Face recognition through face building from two or more partial face images from the same face