Resources Contact Us Home
Amorphous silicon memory

Image Number 8 for United States Patent #5360981.

An analogue memory device comprises a layer of doped amorphous silicon located between a first conducting layer metal contact layer of V, Co, Ni, Pd, Fe or Mn. It has been found that the selection of one of these metals as the contact exerts a significant effect on the properties of the device, e.g. the selection of Al, Au or Cu gives no switching whereas Cr, W, Ag give digital instead of analogue switching.

  Recently Added Patents
Method and apparatus for disease diagnosis and screening using extremely low frequency electromagnetic fields
Optical power measurement method, optical line terminal and optical network unit
Liquid formulations of carboxamide arthropodicides
Methods and systems to reduce a number of simulations in a timing analysis
Method for forming a film
Automatic fixup of network configuration on system image move
Image correction method
  Randomly Featured Patents
NAND-cell type electrically erasable and programmable read-only memory with redundancy circuit
Safety interlock device in an electrically driven household mixing apparatus
Radial ply pneumatic tire
Levelling device
Container for immunoassay with frangible nipple
Reduced calorie fruit spreads
Telescoping skateboard
Method of contact planarization
Method for transmitting variable sized packets from an upper layer of a stack of communication protocol layers to a lower layer intended to manage fixed sized packets
Acupuncture device