Resources Contact Us Home
Amorphous silicon memory

Image Number 8 for United States Patent #5360981.

An analogue memory device comprises a layer of doped amorphous silicon located between a first conducting layer metal contact layer of V, Co, Ni, Pd, Fe or Mn. It has been found that the selection of one of these metals as the contact exerts a significant effect on the properties of the device, e.g. the selection of Al, Au or Cu gives no switching whereas Cr, W, Ag give digital instead of analogue switching.

  Recently Added Patents
Video editing apparatus
Image forming apparatus having exhaust fan
All-angle light emitting element having high heat dissipating efficiency
Method for manufacturing a magnet coil configuration using a slit band-shaped conductor
Promoting content
Horizontal cable manager
Apparatus and method for encoding/decoding signal
  Randomly Featured Patents
Powder actuated tool
Engine with air-assisted fuel injection and engine integrated air feed
Method and apparatus for applying plastic sleeves to containers
Photographic bleaching solution and use thereof in photographic color processing
Method and apparatus for processing a body having a vitreous surface
Apparatus and methods for detecting and locating signals
Footwear upper
Emergency breathing apparatus
Multiple thermostat assembly
Sprayer system