Resources Contact Us Home
Amorphous silicon memory

Image Number 8 for United States Patent #5360981.

An analogue memory device comprises a layer of doped amorphous silicon located between a first conducting layer metal contact layer of V, Co, Ni, Pd, Fe or Mn. It has been found that the selection of one of these metals as the contact exerts a significant effect on the properties of the device, e.g. the selection of Al, Au or Cu gives no switching whereas Cr, W, Ag give digital instead of analogue switching.

  Recently Added Patents
System and method of generating multimedia ringback based on deduced user intent
Battery pack
Method for using a bit specific reference level to read a phase change memory
Apparatus and method for error correction in mobile wireless applications incorporating correction bypass
Flight recorder deployment system and method
Method and system of dynamic data storage for error correction in a memory device
Semiconductor device and manufacturing method thereof
  Randomly Featured Patents
Effort reduction system for the actuation of the clutch pedal for motor vehicles
Decorating tool
Faucet knob
Dispensing device with a disposable pump
Drywall tape dispenser
Vented capillary gas chromatography apparatus
Shaft driven trencher
Phytase-producing bacteria
Cis-1,4-polyisoprene rubber composition
Rotary latch mechanism for securing cowl sections of an outboard motor