Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Amorphous silicon memory










Image Number 8 for United States Patent #5360981.

An analogue memory device comprises a layer of doped amorphous silicon located between a first conducting layer metal contact layer of V, Co, Ni, Pd, Fe or Mn. It has been found that the selection of one of these metals as the contact exerts a significant effect on the properties of the device, e.g. the selection of Al, Au or Cu gives no switching whereas Cr, W, Ag give digital instead of analogue switching.








 
 
  Recently Added Patents
RFID reader revocation checking using low power attached displays
Toy ball
Stowable pet leash and collar
Adding co-users to user definable co-user lists
Clostridium chauvoei polypeptide, DNA encoding the polypeptide and a vaccine comprising the polypeptide
Deposition apparatus and method for manufacturing organic light emitting diode display using the same
Multi-level integrated circuit, device and method for modeling multi-level integrated circuits
  Randomly Featured Patents
Iron group based and chromium based fine spherical particles
Video poker games with extra hands on next round for certain starting hands
Heat pad
Support mechanism for a reciprocating tool
Lily plant named `Polka Dot`
Bench
Film type antenna and mobile communication terminal case using the same
Cold cathode and cold cathode discharge device
Methods and compositions for the introduction of molecules into cells
Flame retardant resin composition and molded article thereof