Resources Contact Us Home
Amorphous silicon memory

Image Number 8 for United States Patent #5360981.

An analogue memory device comprises a layer of doped amorphous silicon located between a first conducting layer metal contact layer of V, Co, Ni, Pd, Fe or Mn. It has been found that the selection of one of these metals as the contact exerts a significant effect on the properties of the device, e.g. the selection of Al, Au or Cu gives no switching whereas Cr, W, Ag give digital instead of analogue switching.

  Recently Added Patents
Mobile computing terminal
Solid-state imaging device, method for manufacturing solid-state imaging device, and electronic apparatus
Electronic currency, electronic wallet therefor and electronic payment systems employing them
Bread basket
Resist composition and method for producing resist pattern
Polyfunctional sulfur-containing epoxies and compositions thereof
Pyrazole kinase modulators and methods of use
  Randomly Featured Patents
Locking and releasing mechanism for a vending machine
Laser positioning method and appartus for rotary actuator arms, and the like
Method and apparatus for recognizing parking slot by using bird's eye view and parking assist system using the same
Unobtrusive signature for modulated signals
Arrangement for disintegration of substances
Unique phone accessory system
VPN discovery server
Auxiliary machine driven by engine and motor and capable of starting engine
Cabin door device