Resources Contact Us Home
Amorphous silicon memory

Image Number 8 for United States Patent #5360981.

An analogue memory device comprises a layer of doped amorphous silicon located between a first conducting layer metal contact layer of V, Co, Ni, Pd, Fe or Mn. It has been found that the selection of one of these metals as the contact exerts a significant effect on the properties of the device, e.g. the selection of Al, Au or Cu gives no switching whereas Cr, W, Ag give digital instead of analogue switching.

  Recently Added Patents
Preferential selection of candidates for delta compression
Electric motor
Mobile device case with storage compartment
Image processing system and method
3D solid-state arrangement for solid state memory
Method and apparatus for belling plastic pipe
Lithographic apparatus and device manufacturing method
  Randomly Featured Patents
Substituted camptothecin derivatives and process for their preparation
Ornamental chain
Optical component
Sintered grooved wicks
Touch integrated computer
Integral skin polyurethane molded articles
Gear shift handle
Park-steering assistance system having an improved switch-on and switch-off logic
Oil sump
Ski pole