Resources Contact Us Home
Amorphous silicon memory

Image Number 8 for United States Patent #5360981.

An analogue memory device comprises a layer of doped amorphous silicon located between a first conducting layer metal contact layer of V, Co, Ni, Pd, Fe or Mn. It has been found that the selection of one of these metals as the contact exerts a significant effect on the properties of the device, e.g. the selection of Al, Au or Cu gives no switching whereas Cr, W, Ag give digital instead of analogue switching.

  Recently Added Patents
Discharge lamp comprising coated electrode
Pixel structure of a solid-state image sensor employing a charge sorting method
Fixing device, fixing device control method, and image forming apparatus
Image browsing device, computer control method and information recording medium
Creation and use of test cases for automated testing of media-based applications
Contactless electrical connector for an induction sensor, and sensor including such a connector
Signal generator
  Randomly Featured Patents
Window blind safety device
Ski brake
System and method for encapsulating transaction messages with verifiable data generated identifiers
Gauge means for fluid handling apparatus
Czochralski crystal growing system
Alpine ski/walking boot
Plastic container
Material for electric contacts having arc-quenching properties
High density yeast preparation, a method for producing it and the use of the preparation
Tufting apparatus with dual yarn feed mechanism for producing patterned tufted goods