Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Amorphous silicon memory










Image Number 8 for United States Patent #5360981.

An analogue memory device comprises a layer of doped amorphous silicon located between a first conducting layer metal contact layer of V, Co, Ni, Pd, Fe or Mn. It has been found that the selection of one of these metals as the contact exerts a significant effect on the properties of the device, e.g. the selection of Al, Au or Cu gives no switching whereas Cr, W, Ag give digital instead of analogue switching.








 
 
  Recently Added Patents
Integrated micromachining proximity switch sensors in air/oil lubricators
Selective undo of editing operations performed on data objects
Voltage-mode driver
Educational tablet computer
Methods for expansion of hematopoietic stem and progenitor cells
Tracer wire applicator apparatus and method
III-N device structures and methods
  Randomly Featured Patents
Wireless communication in a multimodal auditory prosthesis
High voltage depletion mode transistor with serpentine current path
Apparatus for separating the components of a non-Newtonian fluid
Portable washing and disinfecting apparatus
High performance sights
Process for the preparation of intermediates used to produce aminothiazoloximino cephalosporins
Polymeric thin-film reversible electrochemical charge storage devices
Digital microscope
Pillar grid array package
Machine for heat sealing polymeric sheets into a spiral drum