Resources Contact Us Home
Contact manufacturing method of a multi-layered metal line structure

Image Number 4 for United States Patent #5354713.

The present invention relates to a manufacturing method of a contact of a multi-layered metal line of a highly integrated semiconductor device.The insulating layer between the metal lines is flattened and step coverage is improved by using a SOG layer or polyimide.

  Recently Added Patents
Electrical conduit containing a fire-resisting thermoplastic composition
Buckle (tube)
Secure provisioning of a portable device using a representation of a key
Organic dual-gate memory and method for producing same
Wiring structure in a semiconductor device, method of forming the wiring structure, semiconductor device including the wiring structure and method of manufacturing the semiconductor device
Quick mounting device
  Randomly Featured Patents
Cover for a plumbing fixture or the like
Crystalline solid lithium cation conductive electrolyte
Method of controlling cell coverage and system of enabling the method
Radiation image capturing system, controller, program, and radiation image capturing method
Graphical user interface in a medical protocol system having time delay rules and a publisher's view
Information terminal device, method for controlling information terminal device, recording medium on which program for controlling information terminal device is recorded, and communication ne
Variable write and read methods for resistive random access memory
Plastic sheeting preventing water droplet formation on its surface
Device and method for sensing water and/or acid in the presence of water in non-aqueous media
Method of manufacturing a semiconductor device