Resources Contact Us Home
Contact manufacturing method of a multi-layered metal line structure

Image Number 4 for United States Patent #5354713.

The present invention relates to a manufacturing method of a contact of a multi-layered metal line of a highly integrated semiconductor device.The insulating layer between the metal lines is flattened and step coverage is improved by using a SOG layer or polyimide.

  Recently Added Patents
High gradient lens for charged particle beam
Method and system for scaling usage of a social based application on an online social network
Feature-based autocorrection
Portion of a display panel with an unhappy facial expression icon
Voltage regulator structure that is operationally stable for both low and high capacitive loads
Dynamic report mapping apparatus to physical data source when creating report definitions for information technology service management reporting for peruse of report definition transparency a
System and method for video encoding
  Randomly Featured Patents
Chip area optimized pads
Semiconductor tiling structure and method of formation
Filter for data processing
Digital frequency display device
Exotherm control in polymerization
Database table modeling and event handling method for real time alarm management
Bend-insensitive single-mode optical fiber
Molecular model for chemistry
Apparatus for manufacturing rod-shaped smoking articles
Method of attenuating an optical signal