Resources Contact Us Home
Self arc-extinguishing thyristor and method of manufacturing the same

Image Number 18 for United States Patent #5345095.

A self arc-extinguishing thyristor having a large main current is disclosed. An n-type base layer is formed on a p-type anode layer. The n-type base layer includes in its top center portion a relatively heavily doped p+-type region which is surrounded by p-type region. A p-type base layer is locally coated at its top surface with a relatively thin first n-type emitter layer and a relatively thick second n-type emitter layer. A gate electrode buried in a gate oxide film is disposed on two channel regions and areas around the same. This structure suppresses a current amplification factor of a parasitic thyristor which is formed by the n-type base layer, the p-type region and the first n-type emitter layer, which in turn represses latching up of the parasitic thyristor.

  Recently Added Patents
Soybean cultivar BY0811143
Flexible quantization
Apparatus and method for evaluating an activity distribution, and irradiation system
Process and apparatus for producing composite material that includes carbon nanotubes
Downlink scheduling in fractional frequency reuse (FFR) systems
Playlist search device, playlist search method and program
Behavioral fingerprint based authentication
  Randomly Featured Patents
Grilling utensil
Optical disk system and method for storing disk- and user-specific settings
Reinforcer applicator
Optical processor enhanced receiver architecture (opera)
Electrosurgical system with uniformly enhanced electric field and minimal collateral damage
Silicone polymers for lipophilic fluid systems
Adaptable clock control methods and apparatus for a direct access disk drive system
Tilt type window support mechanism
Package vision evaluation system
Tool for chip removing machining as well as a basic body and an indexable cutting insert therefor