Resources Contact Us Home
Self arc-extinguishing thyristor and method of manufacturing the same

Image Number 14 for United States Patent #5345095.

A self arc-extinguishing thyristor having a large main current is disclosed. An n-type base layer is formed on a p-type anode layer. The n-type base layer includes in its top center portion a relatively heavily doped p+-type region which is surrounded by p-type region. A p-type base layer is locally coated at its top surface with a relatively thin first n-type emitter layer and a relatively thick second n-type emitter layer. A gate electrode buried in a gate oxide film is disposed on two channel regions and areas around the same. This structure suppresses a current amplification factor of a parasitic thyristor which is formed by the n-type base layer, the p-type region and the first n-type emitter layer, which in turn represses latching up of the parasitic thyristor.

  Recently Added Patents
Output circuit
Semiconductor device having a plurality of elements on one semiconductor substrate and method of manufacturing the same
Satellite mounting poles
Conductor-mixed active electrode material, electrode structure, rechargeable battery, and manufacturing method of conductor-mixed active electrode material
Sperm factor sequences
Conductor for transmitting electrical power
Method for production of a thermoelectric apparatus
  Randomly Featured Patents
System and method for cache management in mobile user file systems
Method of reducing power consumption in a remote meter reading system
Small peptides which inhibit binding to T-4 receptors and act as immunogens
Controlled air bleed cigarette holder
Smoothing electrical energy output with mechanical accumulator
Electrical connector
Medical device applying localized high intensity light and heat, particularly for destruction of the endometrium
Method and system for monitoring the use of rented software
Method of interconnecting a panel edge member to panel portions
Planar, topology-free, single-mode, high-power semiconductor quantum-well laser with non-absorbing mirrors and current confinement