Image Number 2 for United States Patent #5298783.
The present invention relates to a combined semiconductor gas sensor, this sensor is constituted by combining two portions, each of the portions is made of a different gas sensitive material, their resistance exhibit different variation with the variation of the density of a specific gas, a detecting signal is led out from the junction of the two portion. Because of the mutual compensation and propagation effect of the two portions of the above mentioned gas sensor, the stability and/or sensitivity as well as the stability to temperature and humidity and the initial relaxation time can be improved. Gas sensors of different characteristics can be obtained by different combinations of two different gas sensitive materials selected according to need.
|
