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Semiconductor substrate having a silicon-on-insulator structure and method of fabricating the same

Image Number 2 for United States Patent #5298449.

The invention provides a silicon-on-insulator semiconductor substrate structure and a method of fabricating the same. The structure includes a base silicon substrate, a mono-crystalline silicon film formed on the base silicon substrate in a predetermined region, a poly-crystalline silicon film formed on the base silicon substrate in opposite region to the predetermined region, an insulator film formed on the polycrystalline silicon film, and a mono-crystalline silicon layer overlaying both the insulator film and the mono-crystalline silicon film so that the mono-crystalline silicon layer is electrically connected to the base silicon substrate through the mono-crystalline silicon film. The mono-crystalline silicon film permits not the mono-crystalline silicon layer only but also the base silicon substrate to serve as active regions.

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