Resources Contact Us Home
Semiconductor substrate having a silicon-on-insulator structure and method of fabricating the same

Image Number 2 for United States Patent #5298449.

The invention provides a silicon-on-insulator semiconductor substrate structure and a method of fabricating the same. The structure includes a base silicon substrate, a mono-crystalline silicon film formed on the base silicon substrate in a predetermined region, a poly-crystalline silicon film formed on the base silicon substrate in opposite region to the predetermined region, an insulator film formed on the polycrystalline silicon film, and a mono-crystalline silicon layer overlaying both the insulator film and the mono-crystalline silicon film so that the mono-crystalline silicon layer is electrically connected to the base silicon substrate through the mono-crystalline silicon film. The mono-crystalline silicon film permits not the mono-crystalline silicon layer only but also the base silicon substrate to serve as active regions.

  Recently Added Patents
Magnetic detection of small entities
Resistor-2 resistor (R-2R) digital-to-analog converter with resistor network reversal
Unified recovery
Apparatus and sensor for adjusting vertical sensor-alignment
Wireless subscriber managing storage of HARQ packets
Profile-based user access to a network management system
Event handling in an integrated execution environment
  Randomly Featured Patents
Method and apparatus for maintaining software at a third-party server
Methods and apparatus to measure a voltage on an integrated circuit
Pipe liner and monitoring system
Projector device
Method for lifting a sea platform from the substructure
Zoom lens
Aromatic polymer and producing method thereof
Hydraulic system for linear drives controlled by a displacer element
Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same
Electrical circuit tester