Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method of manufacturing a thin Hg.sub.1-x Cd.sub.x Te film










Image Number 2 for United States Patent #5290394.

In a method of manufacturing a Hg.sub.1-x Cd.sub.x Te (x=0 to 1) infrared detector using GaAs as a substrate, there is provided a method of depositing a HgCdTe film that has high crystalline quality. By changing the substrate temperature, it is possible to control the plane orientation of a CdTe buffer layer formed on a GaAs (211)B substrate. When the substrate temperature is high, the buffer layer is formed with plane orientation (133) and when the substrate temperature is low, the buffer layer is formed with plane orientation (211). In the former, it is possible to form a film having high crystalline quality as compared with that of a film in the latter.








 
 
  Recently Added Patents
Method and apparatus for detection of LVDT core fallout condition
Light-emitting element, light-emitting device, and electronic device
User interface for integrating applications on a mobile communication device
Tandem electric machine arrangement
Efficient relay automatic repeat request procedure in broadband wireless access system
System and method for distributed security
Luminaire
  Randomly Featured Patents
High-temperature kilns
Thin-film transistor device, utilizing different types of thin film transistors
Goggles
Speech recognition system and method for employing the same
Armoire
Method and apparatus for determining the operational status of a photographic film processor
Mouthpiece
Data carrier having an implanted module based on a metal lead frame
Method of fabricating semiconductor device
Hinged electrical connector