Resources Contact Us Home
Method of manufacturing a thin Hg.sub.1-x Cd.sub.x Te film

Image Number 2 for United States Patent #5290394.

In a method of manufacturing a Hg.sub.1-x Cd.sub.x Te (x=0 to 1) infrared detector using GaAs as a substrate, there is provided a method of depositing a HgCdTe film that has high crystalline quality. By changing the substrate temperature, it is possible to control the plane orientation of a CdTe buffer layer formed on a GaAs (211)B substrate. When the substrate temperature is high, the buffer layer is formed with plane orientation (133) and when the substrate temperature is low, the buffer layer is formed with plane orientation (211). In the former, it is possible to form a film having high crystalline quality as compared with that of a film in the latter.

  Recently Added Patents
System and method for receiving MBMS broadcasting service
System for wireless local area network (WLAN) transmission and for coexistence of WLAN and another type of wireless transmission and methods thereof
Base station, relay station, and bandwidth allocation method
Cathode active material and lithium secondary battery comprising the same
Method for forming contact in an integrated circuit
Communication device
Asynchronous loading of scripts in web pages
  Randomly Featured Patents
Data processing system, storage apparatus and management console
Magnetic disk driver capable of preventing occurrence of a data error resulting from static electricity
Aircraft control panel
Holstered handgun retainer
Abrasive stenciling apparatus
Systems for testing integrated circuits
Telescopic drilling derrick apparatus
Ethylene oxide/propylene oxide/ethylene oxide (EO/PO/EO) triblock copolymer carrier blends
Lacrosse stick with improved head and shaft connections