Resources Contact Us Home
Nonselective germanium deposition by UHV/CVD

Image Number 9 for United States Patent #5286334.

A method of depositing Ge on a Si substrate in a reaction chamber includes the steps of: precleaning the substrate; evacuating the chamber to a pressure below 10.sup.-7 Torr; heating the substrate to C.; and providing a GeH.sub.4 /B.sub.2 H.sub.6 /He mixture of gas with a GeH.sub.4 partial pressure of 2-50 mTorr and a B.sub.2 H.sub.6 partial pressure of 0.08 to 2 mTorr.

  Recently Added Patents
Exhaust purification device of internal combustion engine
Low-contention update buffer queuing for small systems
Threaded tubular connection which is leak-proof under internal and external successive pressure loads
Toaster with pivoting lateral door
Image processing method and image processing apparatus
Purple fringing artifact reduction within a digital image with guidance from a green channel
  Randomly Featured Patents
Helmet trauma bandage and method
Vinyl ester production from acetylene and carboxylic acid utilizing homogeneous catalyst
Antisense compositions for detecting and inhibiting telomerase reverse transcriptase
Wireless transceiver and wireless transmission method
Formulation and method for treating skeletal muscle degeneration caused by malnutrition and disease
Non-volatile semiconductor memory
Method and device for dehydrating heavy oils
Horn contact apparatus and method
Ink cartridge for printer