Resources Contact Us Home
Nonselective germanium deposition by UHV/CVD

Image Number 9 for United States Patent #5286334.

A method of depositing Ge on a Si substrate in a reaction chamber includes the steps of: precleaning the substrate; evacuating the chamber to a pressure below 10.sup.-7 Torr; heating the substrate to C.; and providing a GeH.sub.4 /B.sub.2 H.sub.6 /He mixture of gas with a GeH.sub.4 partial pressure of 2-50 mTorr and a B.sub.2 H.sub.6 partial pressure of 0.08 to 2 mTorr.

  Recently Added Patents
Method for resource allocation in a wireless communication network, method for error-free transmission of information, node and wireless communication network
Braided boomerang pet toy
Luggage wheel housing with wheel
Communication system, authentication device, control server, communication method, and program
System and method for customized prompting
Method for treating wounds for mammals, wound healer compound, and method of manufacturing thereof
  Randomly Featured Patents
Artificial blood conduit
Telescoping cover for a pickup truck bed
Technology replacement cost estimation using environmental cost considerations
Apparatus for treating particles
Fruit juices having a depressed freezing point
Carrier for cuvettes
Isolate of Coniothyrium minitans Campbell, compositions and methods of controlling pathogenic plant fungi
Method and apparatus for providing content information on a roaming channel
Apparatus and method for the arithmetic over-ride of look up table outputs in a programmable logic device
Method for joining a cast part and a case-hardened steel part and component manufactured according to said method