Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Nonselective germanium deposition by UHV/CVD










Image Number 6 for United States Patent #5286334.

A method of depositing Ge on a Si substrate in a reaction chamber includes the steps of: precleaning the substrate; evacuating the chamber to a pressure below 10.sup.-7 Torr; heating the substrate to 300.degree.-600.degree. C.; and providing a GeH.sub.4 /B.sub.2 H.sub.6 /He mixture of gas with a GeH.sub.4 partial pressure of 2-50 mTorr and a B.sub.2 H.sub.6 partial pressure of 0.08 to 2 mTorr.








 
 
  Recently Added Patents
Centralized behavioral information system
Efficient forward ranking in a search engine
Polyolefin and composition for pipe systems and sheets
Use of natriuretic peptide for treating heart failure
Electric connection box
Generalized AC-DC synchronous rectification techniques for single- and multi-phase systems
Recovery of a hot-pluggable serial communication link
  Randomly Featured Patents
Printing a mask with maximum possible process window through adjustment of the source distribution
Low level laser therapy system
Diagnosis and therapy of antibody-mediated inflammatory autoimmune disorders
Method and composition for the diagnosis of equine infectious anemia virus disease by using the recombinant capsid protein virus (p26)
Surface mounting device and its used support
Depth alarm for a seismic sensor
Radioimmunoassay plate
Mobile housing unit
Fine patterning method for semiconductor device
Control circuit for fan