Resources Contact Us Home
Nonselective germanium deposition by UHV/CVD

Image Number 6 for United States Patent #5286334.

A method of depositing Ge on a Si substrate in a reaction chamber includes the steps of: precleaning the substrate; evacuating the chamber to a pressure below 10.sup.-7 Torr; heating the substrate to C.; and providing a GeH.sub.4 /B.sub.2 H.sub.6 /He mixture of gas with a GeH.sub.4 partial pressure of 2-50 mTorr and a B.sub.2 H.sub.6 partial pressure of 0.08 to 2 mTorr.

  Recently Added Patents
Image forming apparatus
Tri-material dual-species neutron spectrometer
System and method for confirming delivery of an electronic message
Light emitting device power supply circuit, and light emitting device driver circuit and control method thereof
Highly stable electrolytic water with reduced NMR half line width
Semiconductor device and method of manufacturing the same
Mobile device case with storage compartment
  Randomly Featured Patents
Self-contained measuring and dispensing device
Air soccer game
Glass composition
Hybrid gun system
Integrated circuit with trimmable passive components
Front bumper for an automobile
Beta-lactam antibiotics
Scar-free wound closer with opposing knife guides
Method and apparatus for extracting facial features from image containing face
Method and system for measuring the imaging quality of an optical imaging system