Resources Contact Us Home
Nonselective germanium deposition by UHV/CVD

Image Number 6 for United States Patent #5286334.

A method of depositing Ge on a Si substrate in a reaction chamber includes the steps of: precleaning the substrate; evacuating the chamber to a pressure below 10.sup.-7 Torr; heating the substrate to C.; and providing a GeH.sub.4 /B.sub.2 H.sub.6 /He mixture of gas with a GeH.sub.4 partial pressure of 2-50 mTorr and a B.sub.2 H.sub.6 partial pressure of 0.08 to 2 mTorr.

  Recently Added Patents
Modification of an object replica
Selecting modulation and coding scheme in the presence of interference
Compounds with (1 E, 6E)-1,7-bis-(3,4-dimethoxyphenyl)-4,4-disubstituted-hepta-1,6-diene-3,5-d- ione structural scaffold, their biological activity, and uses thereof
Satellite mounting pole
Image sensor and method for fabricating the same
Self-correcting amplifier system
  Randomly Featured Patents
Control system for internal combustion engines
Inhibition of lung tumorigenesis by administration of a polyphenol
Adsorption and isomerization of normal and mono-methyl paraffins
Treatment of acne using lipoic acid
High-availability remote-authentication dial-in user service
Charge transfer device having alternating large and small transfer electrodes
Windshield repair bridge
Method for coating a sodium piping in a fast breeder reactor
Chloroprene latex composition, and method for its production and adhesive composition employing it
Surgical hand access apparatus