Resources Contact Us Home
Nonselective germanium deposition by UHV/CVD

Image Number 6 for United States Patent #5286334.

A method of depositing Ge on a Si substrate in a reaction chamber includes the steps of: precleaning the substrate; evacuating the chamber to a pressure below 10.sup.-7 Torr; heating the substrate to C.; and providing a GeH.sub.4 /B.sub.2 H.sub.6 /He mixture of gas with a GeH.sub.4 partial pressure of 2-50 mTorr and a B.sub.2 H.sub.6 partial pressure of 0.08 to 2 mTorr.

  Recently Added Patents
Monitoring and correcting upstream packet loss
System and method for providing radio communication in a land mobile radio system
Method of publicly displaying a person's relationship status
Electronic device and control method therein
Reserving a time block in a calendar application to account for a travel time between geographic locations of appointments
Automatic population of feature capabilities on a communication device
  Randomly Featured Patents
Register controlled DLL for reducing current consumption
Discharge lamp energizing circuit and method of energizing discharge lamp
Continuous data optimization of new access points in positioning systems
Plastic-coated metal plate
Track and insulator constructions for track lighting systems for bus bar spacing
Apparatus for applying release material to a contact fuser roll member utilized in fixing toner images to support sheets
Application of thermal barrier coatings to paper machine drying cylinders to prevent paper edge overdrying
Production of hydrogen peroxide
Key encryption using a client-unique additional key for fraud prevention
Methods and systems for contact lens sterilization