Resources Contact Us Home
Nonselective germanium deposition by UHV/CVD

Image Number 6 for United States Patent #5286334.

A method of depositing Ge on a Si substrate in a reaction chamber includes the steps of: precleaning the substrate; evacuating the chamber to a pressure below 10.sup.-7 Torr; heating the substrate to C.; and providing a GeH.sub.4 /B.sub.2 H.sub.6 /He mixture of gas with a GeH.sub.4 partial pressure of 2-50 mTorr and a B.sub.2 H.sub.6 partial pressure of 0.08 to 2 mTorr.

  Recently Added Patents
Mobile communication terminal having a direct dial function using call history and method for performing the function
System, method, and apparatus for settlement for participation in an electric power grid
Method and system for direct electric heating of a pipeline
Gesture based edit mode
System recovery using external communication device
Information caching system
Apparatus and methods for determining and processing medical outcomes
  Randomly Featured Patents
Consolidated launching of multiple tasks
Erosion control through reduction of moisture transport by secondary flow
Cleaning apparatus
Photoelectric conversion device and method of making the same
Multiple testing bars for testing liquid crystal display and method thereof
Backside illuminated image sensor with stressed film
Device for measuring the surface pressure
Therapeutic inhibitor of vascular smooth muscle cells
Inverter control device for driving a motor and an air conditioner
Connecting cantilever structure for bicycle mud-guards