Resources Contact Us Home
Method for interconnecting layers in a semiconductor device using two etching gases

Image Number 2 for United States Patent #5234864.

A method for interconnecting layers in a semiconductor device is disclosed. The device includes a lower conductive layer formed by capping a second conductive layer on a first conductive layer, a contact window formed in an inter-insulating layer on the lower conductive layer, and an upper conductive layer connected to the lower conductive layer through the contact window. The contact window is formed by removing a portion of the inter-insulating layer where the contact will be formed using a first etching gas, and removing a portion of the second conductive layer where the contact will be formed using a second etching gas. The contact resistance becomes uniform by preventing the formation of a non-volatile mixture in the contact window, and the reliability of the device is improved by planarizing the surface of the lower conductive layer.

  Recently Added Patents
Mobile device mode control based on dual mapping of availability (presence) information
Cavernous nerve stimulation via unidirectional propagation of action potentials
Radio communication system, base station apparatus, terminal apparatus, and radio communication method for radio communication system
Transparent zebrafish and preparation method thereof
Unified recovery
Headset electronics
Call admission control method and system
  Randomly Featured Patents
Data storage and retrieval system
Organo zirconium-chromium mixtures, catalyst prepared therefrom and polymerization of olefins therewith
Corrosion inhibiting additive for cement compositions
Method for reducing the lead release of lead crystal glass
Copy accessory for instant camera
Pellet stove feeder
Undercarriage for X-ray diagnostic equipment
Microgravity dispenser with agitator, metering device and cup filler
Can opener
Electromagnetic rotary driving device