Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method for interconnecting layers in a semiconductor device using two etching gases










Image Number 2 for United States Patent #5234864.

A method for interconnecting layers in a semiconductor device is disclosed. The device includes a lower conductive layer formed by capping a second conductive layer on a first conductive layer, a contact window formed in an inter-insulating layer on the lower conductive layer, and an upper conductive layer connected to the lower conductive layer through the contact window. The contact window is formed by removing a portion of the inter-insulating layer where the contact will be formed using a first etching gas, and removing a portion of the second conductive layer where the contact will be formed using a second etching gas. The contact resistance becomes uniform by preventing the formation of a non-volatile mixture in the contact window, and the reliability of the device is improved by planarizing the surface of the lower conductive layer.








 
 
  Recently Added Patents
Preventative traffic congestion social networking improvement system within a community
Wide viewing angle indicators for network devices
(4937
Device and method for adjusting a chrominance signal based on an edge strength
Plants and seeds of corn variety CV335662
Pet urn enclosure
Herbicide composition having improved effectiveness, method of preparation and use
  Randomly Featured Patents
Method of manufacturing high purity zirconium and hafnium
Molecular mimetics of unique Neisseria meningitidis serogroup B epitopes
Stretched polypropylene films having good surface slip
Gas distribution system
Device for closing shaker lids of tins of paint on shaker machines
Cooling system of lighting apparatus using microwave energy
Method of mounting a bearing block on a mounting plate
Gas operated underwater lamp
Router
Polypeptide with cell-spreading activity