Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Manufacturing method of well region in coms intergrated circuit










Image Number 9 for United States Patent #5114868.

First, N-type channel stoppers are formed in an element formation region of a P-channel MOS transistor and in an element isolation region of the P-channel MOS transistor, of a CMOS transistor. After forming a field oxide film, an N well is formed in the element formation region of the P-channel MOS transistor. In spite of the fact that the dose of ions used for the formation of an N-type channel stopper is smaller than the dose of ions used for the formation of an N well, the surface concentration of the N-type impurity of the N-type channel stopper is higher than that of the N well. The N-type impurity concentration in the portion where the N-type channel stopper and the N well are brought into contact, becomes uniform. The variability in the threshold voltage of the P-channel MOS transistor, the threshold voltage of the P-channel parasitic MOS transistor, the junction breakdown voltage of the P.sup.+ diffused layer and the junction capacitance of the P.sup.+ diffused layer is reduced, so that the device obtained is suited for the submicron process.








 
 
  Recently Added Patents
Computer systems and methods for the query and visualization of multidimensional databases
Tire for motorcycle
Electronic device assemblies
Automatic search system and method
Photoelectric conversion device
Peer to peer (P2P) missing fields and field valuation feedback
Catalyst composition with nanometer crystallites for slurry hydrocracking
  Randomly Featured Patents
Axial air gap brushless alternator
Apparatus for position encoding
Process for preparing a dialkyl acetal of a C8 to C30 aldehyde
Methanol production
Holder for a flower or candle
Metal contact and process
Method and system for displaying information and initiating executions from within a security trading environment
Keyswitch having a reduced height and a keyboard using such a keyswitch
Fermentation process and substrate
Impact resistant woven body