Resources Contact Us Home
Radioisotope production facility for use with positron emission tomography

Image Number 9 for United States Patent #5037602.

A radioisotope production facility (12) produces radioisotopes having application to Positron Emission Tomography. The radioisotopes produced include .sup.18 F, .sup.13 N, .sup.15 O, and .sup.11 C, and are produced by irradiating a selected target material (40) with a high energy .sup.3 He.sup.++ beam accelerated in a radio frequency quadruple (RFQ) linear accelerator (34). The facility includes, in addition to the RFQ linear accelerator and the selected target, a source of .sup.3 He.sup.++ ions (30), low energy transport means (32) for focusing the .sup.3 He.sup.++ beam into the RFQ linear accelerator, and a high energy transport means (36) for directing the accelerated .sup.3 He.sup.++ beam at the selected target. Further included is a target subsystem (16) that holds the target, automatically prepares precursors containing the .sup.18 F, .sup.13 N, .sup.15 O, and .sup.11 C radioisotopes, and an automated radiopharmaceutical subsystem (22) that prepares suitable radiopharmaceuticals from the desired precursors.

  Recently Added Patents
Pull through coronary sinus pacing lead
Apparatus and method for noise removal by spectral smoothing
Method and apparatus for determining storage capacity error for a data storage device
Touchscreen with extended conductive pattern
Providing multiple decode options for a system-on-chip (SoC) fabric
Light-emitting device
Reoccuring keying system
  Randomly Featured Patents
Combination divider and retainer display clip
Golf range method and apparatus
Process for the preparation of optically-active carbazole derivatives
Concentrate for preparing a disinfectant and methods for its preparation and use
Grill for a motor vehicle
Method for calibrating a camera-laser-unit in respect to a calibration-object
Liquid chromatographic analyzer, sample feeder and prelabeling reaction treating method
Photo cap
Wire bonder with bonding arm angle sensor
Hafnium tantalum oxynitride dielectric