Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Laterally stacked Schottky diodes for infrared sensor applications










Image Number 3 for United States Patent #4990988.

Laterally stacked Schottky diodes (25) for infrared sensor applications are fabricated utilizing porous silicon (10) having pores (12). A Schottky metal contact (24) is formed in the pores, such as by electroplating. The sensors may be integrated with silicon circuits on the same chip with a high quantum efficiency, which is ideal for IR focal plane array applications due to uniformity and reproducibility.








 
 
  Recently Added Patents
Data processing system, data processing method, and image forming apparatus
Electric vehicle supply equipment having a socket and a method of charging an electric vehicle
Method for producing carrier on which microorganisms capable of conducting multiple parallel mineralization are immobilized, column reactor and solid medium for cultivating plants
Identifying a characteristic of an individual utilizing facial recognition and providing a display for the individual
Cathode material for lithium ion secondary battery and lithium ion secondary battery using it
Image-processing method and program, and image-processing apparatus
Hedge shear
  Randomly Featured Patents
Flame-producing sound-emitting device
Auto-leveling system for vehicle headlamp
Faucet
Mobile communication terminal, communication apparatus, mobile communication method, and communication method
Microbicidal composition
Bit string merge sort device, method, and program
Oxide/nitride stacked gate dielectric and associated methods
Service plug
Grinding arbor
Method for fabricating a semiconductor device