Resources Contact Us Home
CMOS device with both p+ and n+ gates

Image Number 8 for United States Patent #4890141.

A CMOS device wherein the N-channel devices have n+ gates, and the P-channel devices have p+ gates. A TiN local interconnect system is used to connect the two types of gates, as well as providing connections to moat.

  Recently Added Patents
Method and system for dynamic storage tiering using allocate-on-write snapshots
Method, base station and system for adjusting cell wireless configuration parameter
Fuser member having composite outer layer
Surveillance apparatus and method for wireless mesh network
Assembly for providing an aligned stack of two or more modules and a lithography system or a microscopy system comprising such an assembly
Solid-state imaging apparatus, method of manufacturing solid-state imaging apparatus, and electronic apparatus
Stroboscopic image modulation to reduce the visual blur of an object being viewed by an observer experiencing vibration
  Randomly Featured Patents
Thin film phosphor-converted light emitting diode device
Dispensing and deposit machine
Pull-type booster for vehicle
Tricyclic furo-quinazolinones
Enhanced vision road detection system
Circuits and apparatus which enable elimination of setup time and hold time testing errors
Oxime ester compound and photopolymerization initiator containing such compound
Virtual continuous emission monitoring system
Deep frying utensil
Magnetoresistive sensor capable of providing strong exchange coupling magnetic field, and thin-film magnetic head using the same