Image Number 4 for United States Patent #4890018.
A bipolar-complementary metal oxide semiconductor circuit includes a p-channel MOS transistor, and an n-channel MOS transistor, first and second bipolar transistors. A base of the first bipolar transistor is connected to a negative power source through the n-channel MOS transistor. A diode is connected to the base and emitter of the first bipolar transistor. The diode functions to prevent a reverse-biased voltage exceeding a base-emitter breakdown voltage from being applied between the base and emitter of the first bipolar transistor.