Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Resistive overlayer for magnetic films










Image Number 2 for United States Patent #4857418.

A magnetic, solid state memory cell or sensor includes a magnetoresistive, ferromagnetic layer and a resistive layer overlying the magnetoresistive layer. The resistivity and dimensions of the resistive layer are such that, preferably, only a small fraction of any sense current flowing through the cell or sensor will flow between input and output contacts by way of the resistive layer, yet the magnitude of the sense current will not be reduced below a desired signal level due to the presence of the resistive layer. The resistive layer is comprised of a material which will not diffuse into the magnetoresistive layer. A compound or mixture of a metal and either nitrogen or oxygen, such as tantalum and nitrogen, is preferred as the resistive layer. It is also preferred that the resistive layer be nonmagnetic.








 
 
  Recently Added Patents
Mass spectrometry method
Obviation of recovery of data store consistency for application I/O errors
Cache memory control device, semiconductor integrated circuit, and cache memory control method
Profile and template based dynamic portable user workflow
Self-diagnostic method and system for implantable cardiac device
Haworthia plant named `AMSTERDAM`
Data feed management
  Randomly Featured Patents
Contact information rights management
Header encoding/decoding
Convertible topstack with extruded & ajustable side rails
Vacuum cleaner
Scheduling for a dual sided printing by a dual engine printer
Projected display to enhance computer device use
Plasma deposition of spin chucks to reduce contamination of Silicon wafers
Permeable cement composition and method
Boron-poor neutral glass with titanium and zirconium oxides
Driving device for driving an open/close member