Resources Contact Us Home
Method of establishing a structure of electrical interconnections on a silicon semiconductor device

Image Number 2 for United States Patent #4851369.

After having formed contact islands (20) comprising at least one layer of silicide (20) of titanium or cobalt, these islands are covered by a complementary metallic layer (30) obtained by selective growth of tungsten or molybdenum, which is localized at the said islands. This complementary metallic layer especially serves as a stopping layer during etching of contact openings (33) into an isolating layer (32) supporting the remaining part of the structure of interconnections.

  Recently Added Patents
Power supply system for motor vehicle
High performance actuator motor
Utilizing virtually stored media snapshots for rasterizing print jobs
Audio signal clip detection
Human and mouse targeting peptides identified by phage display
Plants and seeds of corn variety CV577261
Power supply device
  Randomly Featured Patents
Protection of the chromatographic bed in dynamic axial compression chromatography devices
Method and system for non-invasive intracranial pressure monitoring
Thermostable gluconate dehydratase and use thereof
Display lighting system
Magnetic releasing and securing device
Method of forming shallow trench isolation for integrated circuit applications
Signal processing apparatus, signal processing method and storage system
3-[2-Hydroxy-4-(substituted)phenyl]-cycloalkanol analgesic agents
Centric stop mechanism for dental model
Dispersion dyestuffs of the naphtholactam series