Resources Contact Us Home
Method of establishing a structure of electrical interconnections on a silicon semiconductor device

Image Number 2 for United States Patent #4851369.

After having formed contact islands (20) comprising at least one layer of silicide (20) of titanium or cobalt, these islands are covered by a complementary metallic layer (30) obtained by selective growth of tungsten or molybdenum, which is localized at the said islands. This complementary metallic layer especially serves as a stopping layer during etching of contact openings (33) into an isolating layer (32) supporting the remaining part of the structure of interconnections.

  Recently Added Patents
Reproducible dither-noise injection
Real ear measurement system using thin tube
Image processing apparatus
Methods and compositions for improved F-18 labeling of proteins, peptides and other molecules
Determining phase-specific parameters of a physiological variable
Non-aqueous solution process for the preparation of cross-linked polymers
  Randomly Featured Patents
Semiconductor integrated circuit devices and methods for testing same
Viscous thermoplastic melting and dispensing unit
Peristaltically operating roller pump and pump rotor therefor
Cutting blade hard-facing method and apparatus
GTP binding stress-related proteins and methods of use in plants
High performance alumina heat transfer solids for high temperature fluidized bed synthesis gas reactions
Method and apparatus for implementing an unregulated dormant mode in a power converter
Decolorizing colorized skin
Reduced size implantable pump