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Method of establishing a structure of electrical interconnections on a silicon semiconductor device










Image Number 2 for United States Patent #4851369.

After having formed contact islands (20) comprising at least one layer of silicide (20) of titanium or cobalt, these islands are covered by a complementary metallic layer (30) obtained by selective growth of tungsten or molybdenum, which is localized at the said islands. This complementary metallic layer especially serves as a stopping layer during etching of contact openings (33) into an isolating layer (32) supporting the remaining part of the structure of interconnections.








 
 
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