Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method of establishing a structure of electrical interconnections on a silicon semiconductor device










Image Number 2 for United States Patent #4851369.

After having formed contact islands (20) comprising at least one layer of silicide (20) of titanium or cobalt, these islands are covered by a complementary metallic layer (30) obtained by selective growth of tungsten or molybdenum, which is localized at the said islands. This complementary metallic layer especially serves as a stopping layer during etching of contact openings (33) into an isolating layer (32) supporting the remaining part of the structure of interconnections.








 
 
  Recently Added Patents
Base station apparatus and method for use in mobile communication system
Probe card holding apparatus with probe card engagement structure
Method and device for generating low-jitter clock
Production of battery grade materials via an oxalate method
Method and system for facilitating micropayments in a financial transaction system
Semiconductor assembly and semiconductor package including a solder channel
Method for producing (meth)acrylic anhydride, method for storing (meth)acrylic anhydride, and method for producing (meth)acrylate
  Randomly Featured Patents
Plum tree named `Yummybeaut`
Aluminium reduction cells
Method of reducing pruritis using IL-31 monoclonal antibodies
System and method of removing discrete spurious signals in cable broadband and other RF environments
Damper device and manufacturing method for damper device
Methods and systems for auto-marking, watermarking, auditing, reporting, tracing and policy enforcement via e-mail and networking systems
Variable-rate video coding apparatus for maintaining a desired average bit-rate
Spatial signal conversion
Simple and robust digital code tracking loop for wireless communication systems
Preparation and sterilization of green state devices using a supercritical fluid sterilant