Resources Contact Us Home
Method of establishing a structure of electrical interconnections on a silicon semiconductor device

Image Number 2 for United States Patent #4851369.

After having formed contact islands (20) comprising at least one layer of silicide (20) of titanium or cobalt, these islands are covered by a complementary metallic layer (30) obtained by selective growth of tungsten or molybdenum, which is localized at the said islands. This complementary metallic layer especially serves as a stopping layer during etching of contact openings (33) into an isolating layer (32) supporting the remaining part of the structure of interconnections.

  Recently Added Patents
Method and apparatus for modeling computer program behaviour for behavioural detection of malicious program
System and method for enhancing buyer and seller interaction during a group-buying sale
Encoding method and encoding device, decoding method and decoding device and transcoding method and transcoder for multi-object audio signals
Avalanche photo diode and method of manufacturing the same
Wafer level packaging structure with large contact area and preparation method thereof
Dynamically updating privacy settings in a social network
  Randomly Featured Patents
Shower curtain closure
Ceiling fan housing
Heel insert for a shoe sole
Carburation devices
System and process for continuous manufacture of cellular products such as latex foam mattresses, cushions or the like
Recording/reproduction apparatus and recording/reproduction control method
Dross compression apparatus
Infant bath chair
Process of making woven articles comprising water-dispersible multicomponent fibers