Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method of establishing a structure of electrical interconnections on a silicon semiconductor device










Image Number 2 for United States Patent #4851369.

After having formed contact islands (20) comprising at least one layer of silicide (20) of titanium or cobalt, these islands are covered by a complementary metallic layer (30) obtained by selective growth of tungsten or molybdenum, which is localized at the said islands. This complementary metallic layer especially serves as a stopping layer during etching of contact openings (33) into an isolating layer (32) supporting the remaining part of the structure of interconnections.








 
 
  Recently Added Patents
Information processing apparatus and method
Dual source mass spectrometry system
Method to dynamically tune precision resistance
Plants and seeds of hybrid corn variety CH450823
System and method for internet based procurement of goods and services
Lateral double diffused metal oxide semiconductor device and method of manufacturing the same
Image playback device and method and electronic camera with image playback function
  Randomly Featured Patents
Method and apparatus for providing information about anticipated delays to customers at service centers, contact centers, or call centers
Pressurized air support for catalytic reactor
System and method for optimizing a memory controller
Screen printing
Vessel direction control system for small-scale vessel
Wireless sensor network and adaptive method for monitoring the security thereof
Systems and methods for automated sensor polling
Applications and methods of making nitrogen-free anti-reflective layers for semiconductor processing
Tube for a microscope
Soil sampler