Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Method of establishing a structure of electrical interconnections on a silicon semiconductor device










Image Number 2 for United States Patent #4851369.

After having formed contact islands (20) comprising at least one layer of silicide (20) of titanium or cobalt, these islands are covered by a complementary metallic layer (30) obtained by selective growth of tungsten or molybdenum, which is localized at the said islands. This complementary metallic layer especially serves as a stopping layer during etching of contact openings (33) into an isolating layer (32) supporting the remaining part of the structure of interconnections.








 
 
  Recently Added Patents
Process for making diethyl ether from acetic acid
Mineral, nutritional, cosmetic, pharmaceutical, and agricultural compositions and methods for producing the same
Wearable display device
Method for counting and segmenting viral particles in an image
Techniques for generating and displaying a visual flow of user content through a social network
Data processor with virtual machine management
Voltage detection apparatus and combination circuit
  Randomly Featured Patents
Method of making a multi-perforated part out of ceramic matrix composite material
Phenol stabilizers for fluoroolefins
Fax mail automatic distribution system
Method and apparatus for evolving configuration bitstreams
Outlet valve for toilet tank
Display circuitry for ultrasonic imaging
Calibration routine with adaptive load compensation
Two-wire bus instrument
Multilayer material, anti-erosion and anti-abrasion coating incorporating said multilayer material and process for producing said multilayer material
Methods and apparatus for noise reduction in digital images