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Process for forming in a silicon oxide layer a portion with vertical side walls

Image Number 2 for United States Patent #4800170.

A process for forming a buried patterned silicon oxide layer in a silicon chip in which the layer is formed by implanting oxygen into the chip through a mask of silicon oxide on the surface of the silicon chip. The silicon oxide mask is formed to have essentially vertical side walls by interposing an irradiation step between a pair of isotropic wet etching steps in its formation.

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