Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Read only semiconductor memory device with polysilicon drain extensions










Image Number 4 for United States Patent #4649412.

A semiconductor memory device is formed of a polycrystalline silicon electrode terminal layer, which is formed on a MOS transistor except over the gate region and is connected to the drain region of the MOS transistor, and metal wire layer, which is formed on the MOS transistor except over the gate region and is connected to the electrode terminal layer to transmit output signals. Data is written into the semiconductor memory device by ion implantation of the gate of the MOS transistor after the metal wire layer is formed.








 
 
  Recently Added Patents
Monitoring device, monitoring method and non-transitory computer readable medium
Pill identification and counterfeit detection method
(4940
Detecting patterns of abuse in a virtual environment
Cell transport system comprising a homogeneous mixture of agarose and agarase
Graphical user interfaces and occlusion prevention for fisheye lenses with line segment foci
Closed-loop adaptive adjustment of pacing therapy based on cardiogenic impedance signals detected by an implantable medical device
  Randomly Featured Patents
Perspective-based shared scope address resolution method and apparatus
Ellipsiodal vertical jet mound
Magnetic glass particles for use in biogas plants, fermentation and separation processes
Control-surface-mounted landing and taxi lights
RFID tag sensors and methods
Method of operating a warewasher drain valve
Oxime carbamate accelerators for curing polyepoxides
Combination brake/park lockout and steering mechanism and system
Hand controller for a camera crane
Self-biased cascode RF power amplifier in sub-micron technical field