Resources Contact Us Home
Read only semiconductor memory device with polysilicon drain extensions

Image Number 4 for United States Patent #4649412.

A semiconductor memory device is formed of a polycrystalline silicon electrode terminal layer, which is formed on a MOS transistor except over the gate region and is connected to the drain region of the MOS transistor, and metal wire layer, which is formed on the MOS transistor except over the gate region and is connected to the electrode terminal layer to transmit output signals. Data is written into the semiconductor memory device by ion implantation of the gate of the MOS transistor after the metal wire layer is formed.

  Recently Added Patents
SONOS stack with split nitride memory layer
Pre-distortion architecture for compensating non-linear effects
Apparatus for transmitting and receiving data in a wireless communication system and method thereof
Lens barrel and imaging device
Device for maneuvering a vehicle using maneuvering moves using at least one trajectory
High dynamic range pixel structure
Systems and methods for classifying electronic information using advanced active learning techniques
  Randomly Featured Patents
Inputting machine for computer game machine
Apparatus and method for supporting a rotating shaft in a rotary machine
Magnetic memory device having a non-volatile magnetic section and manufacturing thereof
Method for preparing a pigment for polyvinylchloride coloring
Secondary battery, battery pack and car
Tree-like decorative device
Method for (prepolarizing and centering) operating a piezoceramic power switching device
Semiconductor device with improved breakdown properties and manufacturing method thereof
Rendering a map using style identifiers
Adsorption/humidification cooler for humid gaseous fluids