Resources Contact Us Home
Read only semiconductor memory device with polysilicon drain extensions

Image Number 4 for United States Patent #4649412.

A semiconductor memory device is formed of a polycrystalline silicon electrode terminal layer, which is formed on a MOS transistor except over the gate region and is connected to the drain region of the MOS transistor, and metal wire layer, which is formed on the MOS transistor except over the gate region and is connected to the electrode terminal layer to transmit output signals. Data is written into the semiconductor memory device by ion implantation of the gate of the MOS transistor after the metal wire layer is formed.

  Recently Added Patents
Multilayered ceramic electronic component and fabrication method thereof
Systems and methods for implementing pressure sensitive keyboards
Image forming apparatus having a primary transfer unit, a secondary transfer unit, and a direct transfer unit
System and method for seamlessly increasing download throughput
Apparatus and method for extracting cascading style sheet rules
Turbulence sensor and blade condition sensor system
Efficient file system metadata scanning using scoped snapshots
  Randomly Featured Patents
Self-extraction panel hinge
Image reading and transmitting apparatus and method that generates image checking data for a read image, and computer-readable medium storing a computer program therefor
Filter unit
Method and device for recording real-time information
Frame for printed circuit cards
Apparatus for cutting vegetation
Derivatives of 2-(iminomethyl)amino-phenyl, their preparation, their use as medicaments and the pharmaceutical compositions containing them
Format-information synthesizing system