Resources Contact Us Home
Read only semiconductor memory device with polysilicon drain extensions

Image Number 4 for United States Patent #4649412.

A semiconductor memory device is formed of a polycrystalline silicon electrode terminal layer, which is formed on a MOS transistor except over the gate region and is connected to the drain region of the MOS transistor, and metal wire layer, which is formed on the MOS transistor except over the gate region and is connected to the electrode terminal layer to transmit output signals. Data is written into the semiconductor memory device by ion implantation of the gate of the MOS transistor after the metal wire layer is formed.

  Recently Added Patents
Charged-particle beam lens
Electrophoretic element and display device
Sensor packages and method of packaging dies of differing sizes
Artifact removal in nuclear images
Reliable event broadcaster with multiplexing and bandwidth control functions
All-in-one information handling system
Display apparatus, a method for a display control, and program
  Randomly Featured Patents
Apparatus for making multi-layer optical discs
Reusable strapless and backless bra
Electrolytic ozone generator
Method and system for controlling electron beams from field emission cathodes
Packet converting apparatus and method therefor
Motion detector for opening doors
Musician's chair
Sampling and measurement of periodic signals
Process for manufacturing voltage-controlled transistor
Rock bit bearing material