Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Read only semiconductor memory device with polysilicon drain extensions










Image Number 4 for United States Patent #4649412.

A semiconductor memory device is formed of a polycrystalline silicon electrode terminal layer, which is formed on a MOS transistor except over the gate region and is connected to the drain region of the MOS transistor, and metal wire layer, which is formed on the MOS transistor except over the gate region and is connected to the electrode terminal layer to transmit output signals. Data is written into the semiconductor memory device by ion implantation of the gate of the MOS transistor after the metal wire layer is formed.








 
 
  Recently Added Patents
Method of allocating IP address of image forming apparatus using DHCP, image forming apparatus and system of allocating IP address using DHCP
Pet burial pod
Power converter and method of power conversion
Electrophotographic photoreceptor and image forming apparatus including the same
Sensor packages and method of packaging dies of differing sizes
Image processing device, image forming apparatus, and non-transitory computer readable recording medium
Manufacturing method for semiconductor device carrier and semiconductor package using the same
  Randomly Featured Patents
Method of operating a nozzle chamber having radially positioned actuators
Xenogeneic tissue implant in ear pinna
Apparatus and method for sealing a tubular container
Solid-state imaging device and driving method therefor
Apparatus for runnerless injection-compression molding thermosetting materials
Apparatus and method for stacking bricks in preparation for strapping
9-substituted-8-unsubstituted-9-deazaguanines
Smoke evacuator system with electronic control circuitry
Flute support
Power amplifier, power distributor, and power combiner