Resources Contact Us Home
Read only semiconductor memory device with polysilicon drain extensions

Image Number 4 for United States Patent #4649412.

A semiconductor memory device is formed of a polycrystalline silicon electrode terminal layer, which is formed on a MOS transistor except over the gate region and is connected to the drain region of the MOS transistor, and metal wire layer, which is formed on the MOS transistor except over the gate region and is connected to the electrode terminal layer to transmit output signals. Data is written into the semiconductor memory device by ion implantation of the gate of the MOS transistor after the metal wire layer is formed.

  Recently Added Patents
Antenna arrangement and antenna housing
Radio link monitoring (RLM) and reference signal received power (RSRP) measurement for heterogeneous networks
Powder for layerwise manufacturing of objects
Event-triggered server-side macros
Diameter signaling for mobile IPv4
Hydrofluorocarbon refrigerant compositions for heat pump water heaters
Doherty amplifier circuit
  Randomly Featured Patents
Pool cover support
Rectangular-to-polar conversion angle quantizer
Sampled optical focus error detecting system for rotating optical media
Device for supporting and linearly moving an object
Sterilization apparatus
Fast motion estimation apparatus and method based on adaptive search range and partial matching error
Diesel engine cylinder liner puller tool
Seal configuration for top drive swivel apparatus and method
Low compliance tester interface
Method of making pepperoni flakes or pepperoni