Resources Contact Us Home
Read only semiconductor memory device with polysilicon drain extensions

Image Number 4 for United States Patent #4649412.

A semiconductor memory device is formed of a polycrystalline silicon electrode terminal layer, which is formed on a MOS transistor except over the gate region and is connected to the drain region of the MOS transistor, and metal wire layer, which is formed on the MOS transistor except over the gate region and is connected to the electrode terminal layer to transmit output signals. Data is written into the semiconductor memory device by ion implantation of the gate of the MOS transistor after the metal wire layer is formed.

  Recently Added Patents
Method and apparatus for efficiently inserting fills in an integrated circuit layout
Modulation of HSP47 expression
Analog to digital converter with increased sub-range resolution
Universal tablet and smartphone holder
Method for resource allocation in a wireless communication network, method for error-free transmission of information, node and wireless communication network
Compositions and methods of vascular injury repair
Sample analysis and/or sample processing system
  Randomly Featured Patents
Slide type battery ejection mechanism
Golf bag with detachable wheel assembly
Recording mechanism for recording information specified from an external source using capacity information
Tunable resonant cavity filter structure with enhanced ground return
Pressure sensor and method of manufacturing the same
Reed-type clamp device
Composite tip-off container cap
Disposable cartridge for ink drop printer
Computational methods and electronic camera apparatus for determining distance of objects, rapid autofocusing, and obtaining improved focus images
Connection unit, a board for mounting a device under test, a probe card and a device interfacing part