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Method for manufacturing power switching devices










Image Number 3 for United States Patent #4370180.

A method for manufacturing power switching devices such as thyristors and power transistors comprising the steps of forming impurity diffused layers of one conductivity type and of the opposite conductivity type in a semiconductor substrate of one conductivity type; forming a film containing phosphorus on the substrate; diffusing lifetime killer atoms into the substrate; and forming electrodes on the substrate.








 
 
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