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Buried channel charge coupled device with semi-insulating substrate

Image Number 4 for United States Patent #4285000.

A charge coupled device has a semi-insulating semiconductor for a substrate. Resistivity of the semiconductor is at least 10.sup.6 ohm cm. A semi-conductive layer is grown epitaxially or is implanted on the substrate to form a thin, active, charge transport layer. A row of parallel, closely spaced gates on the charge transport layer provides individual storage wells in the charge transport layer. In a preferred embodiment, ohmic contacts adjacent the first and last gates in the row of gates provide a means for injecting a signal into the charge transport layer and a means for detecting the signal. Preferably, the substrate is semi-insulating GaAs and the gates are Schottky barrier gates.

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