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Apparatus for the treatment of semiconductors










Image Number 3 for United States Patent #4138306.

Apparatus for the treatment of semiconductors comprises a reaction chamber for effecting the vapor phase reaction of semiconductor substrates, means for introducing a vapor phase reaction gas into the reaction chamber, a plasma generating section, means for introducing into the plasma generating section a gas suitable for the plasma treatment of the inside of the reaction chamber, microwave power applying means for activating the gas contained in the plasma generating section, conduit means for introducing the activated gas into the reaction chamber, and evacuation means, whereby the undesired deposits formed on the parts other than the semiconductor substrates can be removed easily.








 
 
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