| Class Number |
Class Name |
Patents |
| 438/ |
Methods (156/1) |
0 |
| 438/1 |
Having biomaterial component or integrated with living organism |
80 |
| 438/100 |
Making point contact device |
27 |
| 438/102 |
Having selenium or tellurium elemental semiconductor component |
132 |
| 438/104 |
Having metal oxide or copper sulfide compound semiconductor component |
145 |
| 438/105 |
Having diamond semiconductor component |
193 |
| 438/106 |
Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor |
2,126 |
| 438/128 |
Making device array and selectively interconnecting |
475 |
| 438/133 |
Making regenerative-type switching device (e.g., scr, igbt, thyristor, etc.) |
212 |
| 438/14 |
With measuring or testing |
1,947 |
| 438/141 |
Making conductivity modulation device (e.g., unijunction transistor, double base diode, conductivity-modulated transistor, etc.) |
66 |
| 438/142 |
Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions |
263 |
| 438/19 |
Having integral power source (e.g., battery, etc.) |
37 |
| 438/2 |
Having superconductive component |
106 |
| 438/20 |
Electron emitter manufacture |
384 |
| 438/21 |
Manufacture of electrical device controlled printhead |
283 |
| 438/22 |
Making device or circuit emissive of nonelectrical signal |
1,100 |
| 438/3 |
Having magnetic or ferroelectric component |
1,720 |
| 438/309 |
Forming bipolar transistor by formation or alteration of semiconductive active regions |
405 |
| 438/379 |
Voltage variable capacitance device manufacture (e.g., varactor, etc.) |
82 |
| 438/380 |
Avalanche diode manufacture (e.g., impatt, trappat, etc.) |
100 |
| 438/381 |
Making passive device (e.g., resistor, capacitor, etc.) |
717 |
| 438/4 |
Repair or restoration |
305 |
| 438/400 |
Formation of electrically isolated lateral semiconductive structure |
214 |
| 438/455 |
Bonding of plural semiconductor substrates |
1,199 |
| 438/460 |
Semiconductor substrate dicing |
804 |
| 438/466 |
Direct application of electrical current |
160 |
| 438/471 |
Gettering of substrate |
262 |
| 438/478 |
Formation of semiconductive active region on any substrate (e.g., fluid growth, deposition) |
449 |
| 438/48 |
Making device or circuit responsive to nonelectrical signal |
1,015 |
| 438/5 |
Including control responsive to sensed condition |
433 |
| 438/510 |
Introduction of conductivity modifying dopant into semiconductive material |
243 |
| 438/570 |
Forming schottky junction (i.e., semiconductor-conductor rectifying junction contact) |
186 |
| 438/584 |
Coating with electrically or thermally conductive material |
439 |
| 438/689 |
Chemical etching |
785 |
| 438/758 |
Coating of substrate containing semiconductor region or of semiconductor substrate |
896 |
| 438/795 |
Radiation or energy treatment modifying properties of semiconductor region of substrate (e.g., thermal, corpuscular, electromagnetic, etc.) |
860 |
| 438/800 |
Miscellaneous |
282 |
| 438/900 |
Bulk effect device making |
62 |
| 438/901 |
Capacitive junction |
28 |
| 438/902 |
Capping layer |
107 |
| 438/903 |
Catalyst aided deposition |
49 |
| 438/904 |
Charge carrier lifetime control |
63 |
| 438/905 |
Cleaning of reaction chamber |
325 |
| 438/906 |
Cleaning of wafer as interim step |
524 |
| 438/907 |
Continuous processing |
122 |
| 438/909 |
Controlled atmosphere |
199 |
| 438/910 |
Controlling charging state at semiconductor-insulator interface |
132 |
| 438/911 |
Differential oxidation and etching |
142 |
| 438/912 |
Displacing pn junction |
11 |
| 438/913 |
Diverse treatments performed in unitary chamber |
97 |
| 438/914 |
Doping |
46 |
| 438/926 |
Dummy metallization |
153 |
| 438/927 |
Electromigration resistant metallization |
86 |
| 438/928 |
Front and rear surface processing |
280 |
| 438/929 |
Eutectic semiconductor |
19 |
| 438/930 |
Ternary or quaternary semiconductor comprised of elements from three different groups (e.g., i-iii-v, etc.) |
69 |
| 438/931 |
Silicon carbide semiconductor |
307 |
| 438/932 |
Boron nitride semiconductor |
19 |
| 438/933 |
Germanium or silicon or ge-si on iii-v |
265 |
| 438/934 |
Sheet resistance (i.e., dopant parameters) |
59 |
| 438/935 |
Gas flow control |
177 |
| 438/936 |
Graded energy gap |
84 |
| 438/937 |
Hillock prevention |
40 |
| 438/938 |
Lattice strain control or utilization |
173 |
| 438/939 |
Langmuir-blodgett film utilization |
15 |
| 438/940 |
Laser ablative material removal |
176 |
| 438/941 |
Loading effect mitigation |
19 |
| 438/942 |
Masking |
228 |
| 438/953 |
Making radiation resistant device |
74 |
| 438/954 |
Making oxide-nitride-oxide device |
157 |
| 438/955 |
Melt-back |
26 |
| 438/956 |
Making multiple wavelength emissive device |
21 |
| 438/957 |
Making metal-insulator-metal device |
98 |
| 438/958 |
Passivation layer |
232 |
| 438/959 |
Mechanical polishing of wafer |
160 |
| 438/960 |
Porous semiconductor |
149 |
| 438/961 |
Ion beam source and generation |
35 |
| 438/962 |
Quantum dots and lines |
186 |
| 438/963 |
Removing process residues from vertical substrate surfaces |
117 |
| 438/964 |
Roughened surface |
265 |
| 438/965 |
Shaped junction formation |
107 |
| 438/966 |
Selective oxidation of ion-amorphousized layer |
35 |
| 438/967 |
Semiconductor on specified insulator |
94 |
| 438/968 |
Semiconductor-metal-semiconductor |
6 |
| 438/969 |
Simultaneous formation of monocrystalline and polycrystalline regions |
74 |
| 438/970 |
Specified etch stop material |
192 |
| 438/971 |
Stoichiometric control of host substrate composition |
46 |
| 438/972 |
Stored charge erasure |
23 |
| 438/973 |
Substrate orientation |
92 |
| 438/974 |
Substrate surface preparation |
290 |
| 438/975 |
Substrate or mask aligning feature |
377 |
| 438/976 |
Temporary protective layer |
135 |
| 438/977 |
Thinning or removal of substrate |
546 |
| 438/978 |
Forming tapered edges on substrate or adjacent layers |
267 |
| 438/979 |
Tunnel diodes |
50 |
| 438/980 |
Utilizing process equivalents or options |
73 |
| 438/981 |
Utilizing varying dielectric thickness |
392 |
| 438/982 |
Varying orientation of devices in array |
28 |
| 438/983 |
Zener diodes |
63 |
| 438/99 |
Having organic semiconductive component |
696 |
