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Class Information
Number: 438/FOR123
Name: Semiconductor device manufacturing: process >
Description:










Sub-classes under this class:

Class Number Class Name Patents
438/ Methods (156/1) 0
438/1 Having biomaterial component or integrated with living organism 126
438/100 Making point contact device 46
438/102 Having selenium or tellurium elemental semiconductor component 569
438/104 Having metal oxide or copper sulfide compound semiconductor component 636
438/105 Having diamond semiconductor component 275
438/106 Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor 3,204
438/128 Making device array and selectively interconnecting 757
438/133 Making regenerative-type switching device (e.g., scr, igbt, thyristor, etc.) 295
438/14 With measuring or testing 2,542
438/141 Making conductivity modulation device (e.g., unijunction transistor, double base diode, conductivity-modulated transistor, etc.) 117
438/142 Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions 461
438/19 Having integral power source (e.g., battery, etc.) 91
438/2 Having superconductive component 126
438/20 Electron emitter manufacture 450
438/21 Manufacture of electrical device controlled printhead 378
438/22 Making device or circuit emissive of nonelectrical signal 1,990
438/3 Having magnetic or ferroelectric component 2,350
438/309 Forming bipolar transistor by formation or alteration of semiconductive active regions 518
438/379 Voltage variable capacitance device manufacture (e.g., varactor, etc.) 131
438/380 Avalanche diode manufacture (e.g., impatt, trappat, etc.) 138
438/381 Making passive device (e.g., resistor, capacitor, etc.) 1,105
438/4 Repair or restoration 417
438/400 Formation of electrically isolated lateral semiconductive structure 320
438/455 Bonding of plural semiconductor substrates 2,006
438/460 Semiconductor substrate dicing 1,273
438/466 Direct application of electrical current 195
438/471 Gettering of substrate 324
438/478 Formation of semiconductive active region on any substrate (e.g., fluid growth, deposition) 1,124
438/48 Making device or circuit responsive to nonelectrical signal 1,655
438/5 Including control responsive to sensed condition 620
438/510 Introduction of conductivity modifying dopant into semiconductive material 402
438/570 Forming schottky junction (i.e., semiconductor-conductor rectifying junction contact) 274
438/584 Coating with electrically or thermally conductive material 686
438/689 Chemical etching 1,366
438/758 Coating of substrate containing semiconductor region or of semiconductor substrate 1,271
438/795 Radiation or energy treatment modifying properties of semiconductor region of substrate (e.g., thermal, corpuscular, electromagnetic, etc.) 1,281
438/800 Miscellaneous 373
438/900 Bulk effect device making 116
438/901 Capacitive junction 29
438/902 Capping layer 118
438/903 Catalyst aided deposition 56
438/904 Charge carrier lifetime control 64
438/905 Cleaning of reaction chamber 402
438/906 Cleaning of wafer as interim step 615
438/907 Continuous processing 132
438/909 Controlled atmosphere 213
438/910 Controlling charging state at semiconductor-insulator interface 136
438/911 Differential oxidation and etching 151
438/912 Displacing pn junction 13
438/913 Diverse treatments performed in unitary chamber 108
438/914 Doping 64
438/926 Dummy metallization 204
438/927 Electromigration resistant metallization 99
438/928 Front and rear surface processing 308
438/929 Eutectic semiconductor 22
438/930 Ternary or quaternary semiconductor comprised of elements from three different groups (e.g., i-iii-v, etc.) 75
438/931 Silicon carbide semiconductor 395
438/932 Boron nitride semiconductor 19
438/933 Germanium or silicon or ge-si on iii-v 309
438/934 Sheet resistance (i.e., dopant parameters) 59
438/935 Gas flow control 190
438/936 Graded energy gap 89
438/937 Hillock prevention 43
438/938 Lattice strain control or utilization 219
438/939 Langmuir-blodgett film utilization 16
438/940 Laser ablative material removal 217
438/941 Loading effect mitigation 19
438/942 Masking 306
438/953 Making radiation resistant device 75
438/954 Making oxide-nitride-oxide device 182
438/955 Melt-back 27
438/956 Making multiple wavelength emissive device 34
438/957 Making metal-insulator-metal device 123
438/958 Passivation layer 252
438/959 Mechanical polishing of wafer 183
438/960 Porous semiconductor 171
438/961 Ion beam source and generation 45
438/962 Quantum dots and lines 260
438/963 Removing process residues from vertical substrate surfaces 126
438/964 Roughened surface 292
438/965 Shaped junction formation 108
438/966 Selective oxidation of ion-amorphousized layer 36
438/967 Semiconductor on specified insulator 101
438/968 Semiconductor-metal-semiconductor 7
438/969 Simultaneous formation of monocrystalline and polycrystalline regions 78
438/970 Specified etch stop material 202
438/971 Stoichiometric control of host substrate composition 46
438/972 Stored charge erasure 24
438/973 Substrate orientation 105
438/974 Substrate surface preparation 316
438/975 Substrate or mask aligning feature 436
438/976 Temporary protective layer 167
438/977 Thinning or removal of substrate 625
438/978 Forming tapered edges on substrate or adjacent layers 280
438/979 Tunnel diodes 64
438/980 Utilizing process equivalents or options 73
438/981 Utilizing varying dielectric thickness 422
438/982 Varying orientation of devices in array 31
438/983 Zener diodes 78
438/99 Having organic semiconductive component 1,578


Patents under this class:

Patent Number Title Of Patent Date Issued











 
 
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