| Class Number |
Class Name |
Patents |
| 438/ |
Methods (156/1) |
0 |
| 438/1 |
Having biomaterial component or integrated with living organism |
115 |
| 438/100 |
Making point contact device |
41 |
| 438/102 |
Having selenium or tellurium elemental semiconductor component |
467 |
| 438/104 |
Having metal oxide or copper sulfide compound semiconductor component |
453 |
| 438/105 |
Having diamond semiconductor component |
260 |
| 438/106 |
Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor |
2,963 |
| 438/128 |
Making device array and selectively interconnecting |
702 |
| 438/133 |
Making regenerative-type switching device (e.g., scr, igbt, thyristor, etc.) |
270 |
| 438/14 |
With measuring or testing |
2,431 |
| 438/141 |
Making conductivity modulation device (e.g., unijunction transistor, double base diode, conductivity-modulated transistor, etc.) |
109 |
| 438/142 |
Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions |
406 |
| 438/19 |
Having integral power source (e.g., battery, etc.) |
78 |
| 438/2 |
Having superconductive component |
123 |
| 438/20 |
Electron emitter manufacture |
433 |
| 438/21 |
Manufacture of electrical device controlled printhead |
357 |
| 438/22 |
Making device or circuit emissive of nonelectrical signal |
1,793 |
| 438/3 |
Having magnetic or ferroelectric component |
2,186 |
| 438/309 |
Forming bipolar transistor by formation or alteration of semiconductive active regions |
498 |
| 438/379 |
Voltage variable capacitance device manufacture (e.g., varactor, etc.) |
120 |
| 438/380 |
Avalanche diode manufacture (e.g., impatt, trappat, etc.) |
130 |
| 438/381 |
Making passive device (e.g., resistor, capacitor, etc.) |
1,003 |
| 438/4 |
Repair or restoration |
388 |
| 438/400 |
Formation of electrically isolated lateral semiconductive structure |
296 |
| 438/455 |
Bonding of plural semiconductor substrates |
1,834 |
| 438/460 |
Semiconductor substrate dicing |
1,173 |
| 438/466 |
Direct application of electrical current |
181 |
| 438/471 |
Gettering of substrate |
312 |
| 438/478 |
Formation of semiconductive active region on any substrate (e.g., fluid growth, deposition) |
923 |
| 438/48 |
Making device or circuit responsive to nonelectrical signal |
1,532 |
| 438/5 |
Including control responsive to sensed condition |
581 |
| 438/510 |
Introduction of conductivity modifying dopant into semiconductive material |
379 |
| 438/570 |
Forming schottky junction (i.e., semiconductor-conductor rectifying junction contact) |
260 |
| 438/584 |
Coating with electrically or thermally conductive material |
637 |
| 438/689 |
Chemical etching |
1,227 |
| 438/758 |
Coating of substrate containing semiconductor region or of semiconductor substrate |
1,200 |
| 438/795 |
Radiation or energy treatment modifying properties of semiconductor region of substrate (e.g., thermal, corpuscular, electromagnetic, etc.) |
1,201 |
| 438/800 |
Miscellaneous |
361 |
| 438/900 |
Bulk effect device making |
113 |
| 438/901 |
Capacitive junction |
29 |
| 438/902 |
Capping layer |
117 |
| 438/903 |
Catalyst aided deposition |
55 |
| 438/904 |
Charge carrier lifetime control |
63 |
| 438/905 |
Cleaning of reaction chamber |
386 |
| 438/906 |
Cleaning of wafer as interim step |
598 |
| 438/907 |
Continuous processing |
130 |
| 438/909 |
Controlled atmosphere |
209 |
| 438/910 |
Controlling charging state at semiconductor-insulator interface |
135 |
| 438/911 |
Differential oxidation and etching |
150 |
| 438/912 |
Displacing pn junction |
13 |
| 438/913 |
Diverse treatments performed in unitary chamber |
106 |
| 438/914 |
Doping |
60 |
| 438/926 |
Dummy metallization |
193 |
| 438/927 |
Electromigration resistant metallization |
95 |
| 438/928 |
Front and rear surface processing |
302 |
| 438/929 |
Eutectic semiconductor |
22 |
| 438/930 |
Ternary or quaternary semiconductor comprised of elements from three different groups (e.g., i-iii-v, etc.) |
75 |
| 438/931 |
Silicon carbide semiconductor |
376 |
| 438/932 |
Boron nitride semiconductor |
19 |
| 438/933 |
Germanium or silicon or ge-si on iii-v |
306 |
| 438/934 |
Sheet resistance (i.e., dopant parameters) |
59 |
| 438/935 |
Gas flow control |
186 |
| 438/936 |
Graded energy gap |
88 |
| 438/937 |
Hillock prevention |
43 |
| 438/938 |
Lattice strain control or utilization |
208 |
| 438/939 |
Langmuir-blodgett film utilization |
16 |
| 438/940 |
Laser ablative material removal |
211 |
| 438/941 |
Loading effect mitigation |
19 |
| 438/942 |
Masking |
288 |
| 438/953 |
Making radiation resistant device |
75 |
| 438/954 |
Making oxide-nitride-oxide device |
181 |
| 438/955 |
Melt-back |
27 |
| 438/956 |
Making multiple wavelength emissive device |
28 |
| 438/957 |
Making metal-insulator-metal device |
120 |
| 438/958 |
Passivation layer |
246 |
| 438/959 |
Mechanical polishing of wafer |
175 |
| 438/960 |
Porous semiconductor |
168 |
| 438/961 |
Ion beam source and generation |
44 |
| 438/962 |
Quantum dots and lines |
249 |
| 438/963 |
Removing process residues from vertical substrate surfaces |
126 |
| 438/964 |
Roughened surface |
287 |
| 438/965 |
Shaped junction formation |
108 |
| 438/966 |
Selective oxidation of ion-amorphousized layer |
36 |
| 438/967 |
Semiconductor on specified insulator |
101 |
| 438/968 |
Semiconductor-metal-semiconductor |
7 |
| 438/969 |
Simultaneous formation of monocrystalline and polycrystalline regions |
78 |
| 438/970 |
Specified etch stop material |
200 |
| 438/971 |
Stoichiometric control of host substrate composition |
46 |
| 438/972 |
Stored charge erasure |
24 |
| 438/973 |
Substrate orientation |
104 |
| 438/974 |
Substrate surface preparation |
313 |
| 438/975 |
Substrate or mask aligning feature |
428 |
| 438/976 |
Temporary protective layer |
160 |
| 438/977 |
Thinning or removal of substrate |
602 |
| 438/978 |
Forming tapered edges on substrate or adjacent layers |
278 |
| 438/979 |
Tunnel diodes |
62 |
| 438/980 |
Utilizing process equivalents or options |
73 |
| 438/981 |
Utilizing varying dielectric thickness |
416 |
| 438/982 |
Varying orientation of devices in array |
31 |
| 438/983 |
Zener diodes |
78 |
| 438/99 |
Having organic semiconductive component |
1,380 |
