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Class Information
Number: 438/966
Name: Semiconductor device manufacturing: process > Selective oxidation of ion-amorphousized layer
Description: Art collection involving enhancing the oxidation of predetermined substrate regions by ion amorphousization of the regions.










Patents under this class:

Patent Number Title Of Patent Date Issued
8021989 Method for high topography patterning Sep. 20, 2011
7538395 Method of forming low capacitance ESD device and structure therefor May. 26, 2009
7425480 Semiconductor device and method of manufacture thereof Sep. 16, 2008
7303946 Method of manufacturing a semiconductor device using an oxidation process Dec. 4, 2007
6998353 Active wafer cooling during damage engineering implant to enhance buried oxide formation in SIMOX wafers Feb. 14, 2006
6900111 Method of forming a thin oxide layer having improved reliability on a semiconductor surface May. 31, 2005
6869891 Semiconductor device having groove and method of fabricating the same Mar. 22, 2005
6855994 Multiple-thickness gate oxide formed by oxygen implantation Feb. 15, 2005
6743651 Method of forming a SiGe-on-insulator substrate using separation by implantation of oxygen Jun. 1, 2004
6455405 Using implantation method to control gate oxide thickness on dual oxide semiconductor devices Sep. 24, 2002
6407014 Method achieving higher inversion layer mobility in novel silicon carbide semiconductor devices Jun. 18, 2002
6383859 Method of forming semiconductor device including patterning lower electrode of capacitor and gate electrode of transistor with same resist May. 7, 2002
6232206 Method for forming electrostatic discharge (ESD) protection transistors May. 15, 2001
6143624 Shallow trench isolation formation with spacer-assisted ion implantation Nov. 7, 2000
6013557 Advanced CMOS isolation utilizing enhanced oxidation by light ion implantation Jan. 11, 2000
5930658 Oxidized oxygen-doped amorphous silicon ultrathin gate oxide structures Jul. 27, 1999
5895252 Field oxidation by implanted oxygen (FIMOX) Apr. 20, 1999
5780347 Method of forming polysilicon local interconnects Jul. 14, 1998
5691212 MOS device structure and integration method Nov. 25, 1997
5407838 Method for fabricating a semiconductor device using implantation and subsequent annealing to eliminate defects Apr. 18, 1995
5376560 Method for forming isolated semiconductor structures Dec. 27, 1994
5372952 Method for forming isolated semiconductor structures Dec. 13, 1994
5364804 Nitride cap sidewall oxide protection from BOE etch Nov. 15, 1994
5270244 Method for forming an oxide-filled trench in silicon carbide Dec. 14, 1993
5219766 Semiconductor device having a radiation resistance and method for manufacturing same Jun. 15, 1993
5215934 Process for reducing program disturbance in EEPROM arrays Jun. 1, 1993
5043292 Self-aligned masking for ultra-high energy implants with application to localized buried implants and insolation structures Aug. 27, 1991
4957873 Process for forming isolation trenches in silicon semiconductor bodies Sep. 18, 1990
4818711 High quality oxide on an ion implanted polysilicon surface Apr. 4, 1989
4814291 Method of making devices having thin dielectric layers Mar. 21, 1989
4660276 Method of making a MOS field effect transistor in an integrated circuit Apr. 28, 1987
4597164 Trench isolation process for integrated circuit devices Jul. 1, 1986
4552595 Method of manufacturing a semiconductor substrate having dielectric regions Nov. 12, 1985
4407696 Fabrication of isolation oxidation for MOS circuit Oct. 4, 1983
4157268 Localized oxidation enhancement for an integrated injection logic circuit Jun. 5, 1979
4098618 Method of manufacturing semiconductor devices in which oxide regions are formed by an oxidation mask disposed directly on a substrate damaged by ion implantation Jul. 4, 1978











 
 
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