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Class Information
Number: 438/961
Name: Semiconductor device manufacturing: process > Ion beam source and generation
Description: Art collection involving use of an ion source with the generation of ions therefrom.

Patents under this class:

Patent Number Title Of Patent Date Issued
8519355 Charged particle source Aug. 27, 2013
8440578 GCIB process for reducing interfacial roughness following pre-amorphization May. 14, 2013
8343859 Non-uniform ion implantation apparatus and method thereof Jan. 1, 2013
8188445 Ion source May. 29, 2012
8110478 Method for manufacturing semiconductor substrate, display panel, and display device Feb. 7, 2012
7902087 Organic electroluminescent display device and method of preparing the same Mar. 8, 2011
7820979 Pulsed ultraviolet ion source Oct. 26, 2010
7776307 Concentric gate nanotube transistor devices Aug. 17, 2010
7767977 Ion source Aug. 3, 2010
7659505 Ion source vessel and methods Feb. 9, 2010
7611975 Method of implanting a substrate and an ion implanter for performing the method Nov. 3, 2009
7604690 Composite material for ultra thin membranes Oct. 20, 2009
7422970 Method for modifying circuit within substrate Sep. 9, 2008
7405152 Reducing wire erosion during damascene processing Jul. 29, 2008
7361913 Methods and apparatus for glitch recovery in stationary-beam ion implantation process using fast ion beam control Apr. 22, 2008
7202133 Structure and method to form source and drain regions over doped depletion regions Apr. 10, 2007
7157325 Method for fabricating semiconductor memory device Jan. 2, 2007
7037732 Method and device for cutting wire formed on semiconductor substrate May. 2, 2006
6977204 Method for forming contact plug having double doping distribution in semiconductor device Dec. 20, 2005
6965116 Method of determining dose uniformity of a scanning ion implanter Nov. 15, 2005
6927148 Ion implantation method and method for manufacturing SOI wafer Aug. 9, 2005
6872628 Method of manufacturing semiconductor device Mar. 29, 2005
6815311 Method for fabricating semiconductor memory device Nov. 9, 2004
6762094 Nanometer-scale semiconductor devices and method of making Jul. 13, 2004
6555451 Method for making shallow diffusion junctions in semiconductors using elemental doping Apr. 29, 2003
6518175 Process for reducing critical dimensions of contact holes, vias, and trench structures in integrated circuits Feb. 11, 2003
6265327 Method for forming an insulating film on semiconductor substrate surface and apparatus for carrying out the method Jul. 24, 2001
6159867 RF powered plasma enhanced chemical vapor deposition reactor and methods of effecting plasma enhanced chemical vapor deposition Dec. 12, 2000
5907792 Method of forming a silicon nitride layer May. 25, 1999
5824598 IC wiring connecting method using focused energy beams Oct. 20, 1998
5601654 Flow-through ion beam source Feb. 11, 1997
5091048 Ion milling to obtain planarization Feb. 25, 1992
4988640 Method of doping and implanting using arsine, antimony, and phosphine substitutes Jan. 29, 1991
4942138 Ion-implantation of wiring electrodes of a semiconductor device for hillock reduction Jul. 17, 1990
4902647 Surface modification using low energy ground state ion beams Feb. 20, 1990
4740267 Energy intensive surface reactions using a cluster beam Apr. 26, 1988
4481042 Ion implantation method Nov. 6, 1984
4457803 Processing method using a focused ion beam Jul. 3, 1984
4426237 Volatile metal oxide suppression in molecular beam epitaxy systems Jan. 17, 1984
4392453 Molecular beam converters for vacuum coating systems Jul. 12, 1983
4286545 Apparatus for vapor depositing a stoichiometric compound Sep. 1, 1981
4278475 Forming of contoured irradiated regions in materials such as semiconductor bodies by nuclear radiation Jul. 14, 1981
4227961 Process for forming a single-crystal film Oct. 14, 1980
4187124 Process for doping semiconductors Feb. 5, 1980
4159919 Molecular beam epitaxy using premixing Jul. 3, 1979

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