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Class Information
Number: 438/95
Name: Semiconductor device manufacturing: process > Making device or circuit responsive to nonelectrical signal > Responsive to electromagnetic radiation > Compound semiconductor > Chalcogen (i.e., oxygen (o), sulfur (s), selenium (se), tellurium (te)) containing
Description: Process wherein the compound semiconductor contains an element from the group of oxygen, sulfur, selenium, and tellurium.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7618840 |
Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof |
Nov. 17, 2009 |
| 7618841 |
Hydrazine-free solution deposition of chalcogenide films |
Nov. 17, 2009 |
| 7619311 |
Memory cell device with coplanar electrode surface and method |
Nov. 17, 2009 |
| 7615401 |
Methods of fabricating multi-layer phase-changeable memory devices |
Nov. 10, 2009 |
| 7615400 |
Method for producing multijunction solar cell |
Nov. 10, 2009 |
| 7612365 |
Strained silicon with elastic edge relaxation |
Nov. 3, 2009 |
| 7606064 |
Method for reducing a reset current for resetting a portion of a phase change material in a memory cell of a phase change memory device and the phase change memory device |
Oct. 20, 2009 |
| 7606056 |
Process for manufacturing a phase change memory array in Cu-damascene technology and phase change memory array thereby manufactured |
Oct. 20, 2009 |
| 7599216 |
Phase change memory devices and fabrication methods thereof |
Oct. 6, 2009 |
| 7598113 |
Phase change memory device and fabricating method therefor |
Oct. 6, 2009 |
| 7598112 |
Phase change memory devices and their methods of fabrication |
Oct. 6, 2009 |
| 7595218 |
Programmable resistive RAM and manufacturing method |
Sep. 29, 2009 |
| 7582506 |
Precursor containing copper indium and gallium for selenide (sulfide) compound formation |
Sep. 1, 2009 |
| 7582568 |
Method of forming a phase changeable structure |
Sep. 1, 2009 |
| 7579210 |
Planar segmented contact |
Aug. 25, 2009 |
| 7575950 |
Semiconductor device and a method of manufacturing the same |
Aug. 18, 2009 |
| 7572666 |
Reduced area intersection between electrode and programming element |
Aug. 11, 2009 |
| 7570512 |
Phase change memory device with reduced unit cell size and improved transistor current flow and method for manufacturing the same |
Aug. 4, 2009 |
| 7569417 |
Method of forming a phase changeable material layer, a method of manufacturing a phase changeable memory unit, and a method of manufacturing a phase changeable semiconductor memory device |
Aug. 4, 2009 |
| 7563639 |
Phase-changeable memory device and method of manufacturing the same |
Jul. 21, 2009 |
| 7560337 |
Programmable resistive RAM and manufacturing method |
Jul. 14, 2009 |
| 7553692 |
Phase-change memory device and method of manufacturing the same |
Jun. 30, 2009 |
| 7550313 |
Method for delineation of phase change memory (PCM) cells separated by PCM and upper electrode regions modified to have high film resistivity |
Jun. 23, 2009 |
| 7550818 |
Method of manufacture of a PCRAM memory cell |
Jun. 23, 2009 |
| 7534647 |
Damascene phase change RAM and manufacturing method |
May. 19, 2009 |
| 7531378 |
Forming an intermediate electrode between an ovonic threshold switch and a chalcogenide memory element |
May. 12, 2009 |
| 7527985 |
Method for manufacturing a resistor random access memory with reduced active area and reduced contact areas |
May. 5, 2009 |
| 7521281 |
Methods of forming phase-changeable memory devices |
Apr. 21, 2009 |
| 7517718 |
Method for fabricating an inorganic nanocomposite |
Apr. 14, 2009 |
| 7514704 |
Phase-change memory device and method of manufacturing the same |
Apr. 7, 2009 |
| 7514288 |
Manufacturing methods for thin film fuse phase change ram |
Apr. 7, 2009 |
| 7514367 |
Method for manufacturing a narrow structure on an integrated circuit |
Apr. 7, 2009 |
| 7511297 |
Phase change memory device and method of fabricating the same |
Mar. 31, 2009 |
| 7501307 |
Method of fabricating semiconductor memory device |
Mar. 10, 2009 |
| 7494841 |
Solution-based deposition process for metal chalcogenides |
Feb. 24, 2009 |
| 7491573 |
Phase change materials for applications that require fast switching and high endurance |
Feb. 17, 2009 |
| 7491574 |
Reducing oxidation of phase change memory electrodes |
Feb. 17, 2009 |
| 7485487 |
Phase change memory cell with electrode |
Feb. 3, 2009 |
| 7485891 |
Multi-bit phase change memory cell and multi-bit phase change memory including the same, method of forming a multi-bit phase change memory, and method of programming a multi-bit phase change m |
Feb. 3, 2009 |
| 7482616 |
Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same |
Jan. 27, 2009 |
| 7479405 |
PRAMS having a plurality of active regions located vertically in sequence and methods of forming the same |
Jan. 20, 2009 |
| 7473574 |
Memory element with improved contacts |
Jan. 6, 2009 |
| 7473576 |
Method for making a self-converged void and bottom electrode for memory cell |
Jan. 6, 2009 |
| 7468146 |
Metal chalcogenide composite nano-particles and layers therewith |
Dec. 23, 2008 |
| 7465604 |
Methods of fabricating alignment key structures in semiconductor devices including protected electrode structures |
Dec. 16, 2008 |
| 7462858 |
Fabrication of phase change memory element with phase-change electrodes using conformal deposition |
Dec. 9, 2008 |
| 7459336 |
Method of forming a chalcogenide material containing device |
Dec. 2, 2008 |
| 7459764 |
Method of manufacture of a PCRAM memory cell |
Dec. 2, 2008 |
| 7456420 |
Electrode for phase change memory device and method |
Nov. 25, 2008 |
| 7453716 |
Semiconductor memory device with stacked control transistors |
Nov. 18, 2008 |
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