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Class Information
Number: 438/938
Name: Semiconductor device manufacturing: process > Lattice strain control or utilization
Description: Art collection involving the regulation or utilization of lattice strain.

Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8691644 Method of forming a CMOS device with a stressed-channel NMOS transistor and a strained-channel PMOS transistor Apr. 8, 2014
8647941 Method of forming semiconductor device Feb. 11, 2014
8642435 Performing treatment on stressors Feb. 4, 2014
8643061 Structure of high-K metal gate semiconductor transistor Feb. 4, 2014
8633078 Method for manufacturing semiconductor device Jan. 21, 2014
8617945 Stacking fault and twin blocking barrier for integrating III-V on Si Dec. 31, 2013
8603887 Method for depositing a silicon oxide layer of same thickness on silicon and on silicon-germanium Dec. 10, 2013
8545627 Zirconium and hafnium boride alloy templates on silicon for nitride integration applications Oct. 1, 2013
8524012 Technique for the growth of planar semi-polar gallium nitride Sep. 3, 2013
8486793 Method for manufacturing semiconductor device with semiconductor materials with different lattice constants Jul. 16, 2013
8466520 Transistor with an embedded strain-inducing material having a gradually shaped configuration Jun. 18, 2013
8394691 Semiconductor devices having stressor regions and related fabrication methods Mar. 12, 2013
8361893 Semiconductor device and substrate with chalcogen doped region Jan. 29, 2013
8343780 Method of stressing a thin pattern Jan. 1, 2013
8343872 Method of forming strained structures with compound profiles in semiconductor devices Jan. 1, 2013
8304276 Film stress management for MEMS through selective relaxation Nov. 6, 2012
8293609 Method of manufacturing a transistor device having asymmetric embedded strain elements Oct. 23, 2012
8274071 MOS devices with partial stressor channel Sep. 25, 2012
8232581 Method for manufacturing an III-V engineered substrate and the III-V engineered substrate thereof Jul. 31, 2012
8232171 Structure with isotropic silicon recess profile in nanoscale dimensions Jul. 31, 2012
8232191 Semiconductor device manufacturing method Jul. 31, 2012
8227791 Strain balanced light emitting devices Jul. 24, 2012
8207523 Metal oxide semiconductor field effect transistor with strained source/drain extension layer Jun. 26, 2012
8207040 Methods of manufacturing semiconductor devices including forming (111) facets in silicon capping layers on source/drain regions Jun. 26, 2012
8187957 Field-effect transistor and method for fabricating the same May. 29, 2012
8128756 Technique for the growth of planar semi-polar gallium nitride Mar. 6, 2012
8124473 Strain enhanced semiconductor devices and methods for their fabrication Feb. 28, 2012
8110478 Method for manufacturing semiconductor substrate, display panel, and display device Feb. 7, 2012
8063413 Tensile strained GE for electronic and optoelectronic applications Nov. 22, 2011
8049280 Semiconductor device and method of fabricating the same Nov. 1, 2011
7981750 Methods of fabrication of channel-stressed semiconductor devices Jul. 19, 2011
7968911 Relaxation of a strained layer using a molten layer Jun. 28, 2011
7923785 Field effect transistor having increased carrier mobility Apr. 12, 2011
7902008 Methods for fabricating a stressed MOS device Mar. 8, 2011
7892905 Formation of strained Si channel and Si.sub.1-xGe.sub.x source/drain structures using laser annealing Feb. 22, 2011
7867860 Strained channel transistor formation Jan. 11, 2011
7868317 MOS devices with partial stressor channel Jan. 11, 2011
7838354 Method for patterning contact etch stop layers by using a planarization process Nov. 23, 2010
7838934 Semiconductor device and method for manufacturing the same Nov. 23, 2010
7812374 Semiconductor device and fabrication method thereof Oct. 12, 2010
7791144 High performance stress-enhance MOSFET and method of manufacture Sep. 7, 2010
7768041 Multiple conduction state devices having differently stressed liners Aug. 3, 2010
7763515 Transistor with embedded silicon/germanium material on a strained semiconductor on insulator substrate Jul. 27, 2010
7732270 Device having enhanced stress state and related methods Jun. 8, 2010
7700416 Tensile strained semiconductor on insulator using elastic edge relaxation and a sacrificial stressor layer Apr. 20, 2010
7682952 Method for forming low defect density alloy graded layers and structure containing such layers Mar. 23, 2010
7615471 Method for producing a tensioned layer on a substrate, and a layer structure Nov. 10, 2009
7615418 High performance stress-enhance MOSFET and method of manufacture Nov. 10, 2009
7608489 High performance stress-enhance MOSFET and method of manufacture Oct. 27, 2009
7592213 Tensile strained NMOS transistor using group III-N source/drain regions Sep. 22, 2009

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