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Class Information
Number: 438/937
Name: Semiconductor device manufacturing: process > Hillock prevention
Description: Art collection involving the prevention of spikelike projections which protrude from a layer surface.

Patents under this class:

Patent Number Title Of Patent Date Issued
8030737 Semiconductor device and method of manufacturing the same Oct. 4, 2011
7745335 Semiconductor device manufactured by reducing hillock formation in metal interconnects Jun. 29, 2010
7727865 Method for controlling conductivity of Ga.sub.2O.sub.3single crystal Jun. 1, 2010
7531370 Light-emitting diode and its manufacturing method May. 12, 2009
7105451 Method for manufacturing semiconductor device Sep. 12, 2006
6893905 Method of forming substantially hillock-free aluminum-containing components May. 17, 2005
6764951 Method for forming nitride capped Cu lines with reduced hillock formation Jul. 20, 2004
6573127 Thin-film transistor and method of making same Jun. 3, 2003
6518179 Method of controlling hillock formation of platinum thin film of semiconductor memory device by ion bombardment Feb. 11, 2003
6455939 Substantially hillock-free aluminum-containing components Sep. 24, 2002
6268274 Low temperature process for forming inter-metal gap-filling insulating layers in silicon wafer integrated circuitry Jul. 31, 2001
6222271 Method of using hydrogen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom Apr. 24, 2001
6211075 Method of improving metal stack reliability Apr. 3, 2001
6194783 Method of using hydrogen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom Feb. 27, 2001
6107688 Aluminum-containing films derived from using hydrogen and oxygen gas in sputter deposition Aug. 22, 2000
6071796 Method of controlling oxygen incorporation during crystallization of silicon film by excimer laser anneal in air ambient Jun. 6, 2000
6060386 Method and apparatus for forming features in holes, trenches and other voids in the manufacturing of microelectronic devices May. 9, 2000
6057238 Method of using hydrogen and oxygen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom May. 2, 2000
6025892 Active matrix substrate with removal of portion of insulating film overlapping source line and pixel electrode and method for producing the same Feb. 15, 2000
6010958 Method for improving the planarization of dielectric layer in the fabrication of metallic interconnects Jan. 4, 2000
5759912 Method of manufacturing a semiconductor device having multi-layered wiring without hillocks at the insulating layers Jun. 2, 1998
5747361 Stabilization of the interface between aluminum and titanium nitride May. 5, 1998
5672543 Volcano defect-free tungsten plug Sep. 30, 1997
5498571 Method of manufacturing a semiconductor device having reliable multi-layered wiring Mar. 12, 1996
5356659 Metallization for semiconductor devices Oct. 18, 1994
5328873 Process for forming deposited film by use of alkyl aluminum hydride Jul. 12, 1994
5236866 Metal interconnection layer having reduced hillock formation in semi-conductor device and manufacturing method therefor Aug. 17, 1993
5148259 Semiconductor device having thin film wiring layer of aluminum containing carbon Sep. 15, 1992
5082801 Process for producing multilayer interconnection for semiconductor device with interlayer mechanical stress prevention and insulating layers Jan. 21, 1992
5040048 Metal interconnection layer having reduced hillock formation Aug. 13, 1991
4992152 Reducing hillocking in aluminum layers formed on substrates Feb. 12, 1991
4786962 Process for fabricating multilevel metal integrated circuits and structures produced thereby Nov. 22, 1988
4740481 Method of preventing hillock formation in polysilicon layer by oxygen implanation Apr. 26, 1988
4728627 Method of making multilayered interconnects using hillock studs formed by sintering Mar. 1, 1988
4704367 Suppression of hillock growth through multiple thermal cycles by argon implantation Nov. 3, 1987
4680854 Forming low resistivity hillock free conductors in VLSI devices Jul. 21, 1987
4620986 MOS rear end processing Nov. 4, 1986
4587138 MOS rear end processing May. 6, 1986
4525221 Alloying of aluminum metallization Jun. 25, 1985
4525733 Patterning method for reducing hillock density in thin metal films and a structure produced thereby Jun. 25, 1985
4433004 Semiconductor device and a method for manufacturing the same Feb. 21, 1984
4123565 Method of manufacturing semiconductor devices Oct. 31, 1978
3986897 Aluminum treatment to prevent hillocking Oct. 19, 1976

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