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Class Information
Number: 438/936
Name: Semiconductor device manufacturing: process > Graded energy gap
Description: Art collection involving sequential formation of layers of composition or dopant concentration which vary with position in the layer.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8704207 Semiconductor device having nitride semiconductor layer Apr. 22, 2014
8405126 Semiconductor device Mar. 26, 2013
8338196 Light-emitting element and light emitting device using the same Dec. 25, 2012
8217405 Light-emitting diode and method for fabrication thereof Jul. 10, 2012
7842973 Semiconductor device and manufacturing method of the same Nov. 30, 2010
7598513 Si.sub.xSn.sub.yGe.sub.1-x-y and related alloy heterostructures based on Si, Ge and Sn Oct. 6, 2009
7511314 Light emitting device and method of fabricating the same Mar. 31, 2009
7491612 Field effect transistor with a heterostructure and associated production method Feb. 17, 2009
7487050 Techniques and devices for characterizing spatially non-uniform curvatures and stresses in thin-film structures on substrates with non-local effects Feb. 3, 2009
7459716 Resistance change memory device Dec. 2, 2008
7176075 Field effect transistor and method of fabrication Feb. 13, 2007
6939772 Bipolar transistor and fabrication method thereof Sep. 6, 2005
6806502 3-5 Group compound semiconductor and light emitting device Oct. 19, 2004
6794211 Light emitting diode and method of fabricating thereof Sep. 21, 2004
6756325 Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active region Jun. 29, 2004
6703300 Method for making multilayer electronic devices Mar. 9, 2004
6699778 Masking method for producing semiconductor components, particularly a BH laser diode Mar. 2, 2004
6686281 Method for fabricating a semiconductor device and a substrate processing apparatus Feb. 3, 2004
6482672 Using a critical composition grading technique to deposit InGaAs epitaxial layers on InP substrates Nov. 19, 2002
6468818 Method for producing a high-luminance semiconductor light-emitting device capable of operating at a low voltage Oct. 22, 2002
6033926 Method for making multiple wavelength semiconductor lasers on a single wafer Mar. 7, 2000
6033945 Multiple equilibration circuits for a single bit line Mar. 7, 2000
5985689 Method of fabricating photoelectric conversion device having at least one step-back layer Nov. 16, 1999
5714777 Si/SiGe vertical junction field effect transistor Feb. 3, 1998
5670414 Graded-gap process for growing a SiC/Si heterojunction structure Sep. 23, 1997
5656514 Method for making heterojunction bipolar transistor with self-aligned retrograde emitter profile Aug. 12, 1997
5631173 Method for forming collector up heterojunction bipolar transistor having insulative extrinsic emitter May. 20, 1997
5571732 Method for fabricating a bipolar transistor Nov. 5, 1996
5525541 Method of making an electronic and/or photonic component Jun. 11, 1996
5525539 Method for forming a light emitting diode for use as an efficient emitter or detector of light at a common wavelength Jun. 11, 1996
5429957 Method of manufacturing an heterojunction bipolar transistor Jul. 4, 1995
5400352 Semiconductor laser and method therefor Mar. 21, 1995
5389554 Method for fabricating microwave heterojunction bipolar transistors with emitters designed for high power applications Feb. 14, 1995
5378640 Method of fabricating a transmission mode InGaAs photocathode for night vision system Jan. 3, 1995
5372658 Disordered crystalline semiconductor Dec. 13, 1994
5372970 Method for epitaxially growing a II-VI compound semiconductor Dec. 13, 1994
5366927 Method of fabricating epitaxially deposited ohmic contacts using group II-V I Nov. 22, 1994
5352912 Graded bandgap single-crystal emitter heterojunction bipolar transistor Oct. 4, 1994
5284783 Method of fabricating a heterojunction bipolar transistor Feb. 8, 1994
5281299 Method for manufacturing a crystal with a lattice parameter gradient Jan. 25, 1994
5225371 Laser formation of graded junction devices Jul. 6, 1993
5204284 Method of making a high band-gap opto-electronic device Apr. 20, 1993
5192711 Method for producing a semiconductor laser device Mar. 9, 1993
5192695 Method of making an infrared detector Mar. 9, 1993
5177025 Method of fabricating an ultra-thin active region for high speed semiconductor devices Jan. 5, 1993
5162243 Method of producing high reliability heterojunction bipolar transistors Nov. 10, 1992
5147817 Method for forming programmable resistive element Sep. 15, 1992
5034342 Method of forming semiconductor stalk structure by epitaxial growth in trench Jul. 23, 1991
5021360 Method of farbicating highly lattice mismatched quantum well structures Jun. 4, 1991
4968642 Method of making a gallium arsenide phosphide-, mixed crystal-epitaxial wafer Nov. 6, 1990

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