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Class Information
Number: 438/934
Name: Semiconductor device manufacturing: process > Sheet resistance (i.e., dopant parameters)
Description: Art collection directed to the electrical resistivity of a thin film of semiconductor material.










Patents under this class:
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Patent Number Title Of Patent Date Issued
7018856 Calibration standards for dopants/impurities in silicon and preparation method Mar. 28, 2006
6579730 Monitoring process for oxide removal Jun. 17, 2003
6218301 Deposition of tungsten films from W(CO)6 Apr. 17, 2001
6043143 Ohmic contact and method of manufacture Mar. 28, 2000
5872017 In-situ epitaxial passivation for resistivity measurement Feb. 16, 1999
5728598 Method of manufacturing a SRAM cell having a low stand-by current Mar. 17, 1998
5721150 Use of silicon for integrated circuit device interconnection by direct writing of patterns therein Feb. 24, 1998
5686359 Titanium silicide process Nov. 11, 1997
5679607 Method of manufacturing a damage free buried contact using salicide technology Oct. 21, 1997
5652151 Method for determining an impurity concentration profile Jul. 29, 1997
5624869 Method of forming a film for a multilayer Semiconductor device for improving thermal stability of cobalt silicide using platinum or nitrogen Apr. 29, 1997
5624871 Method for making electrical local interconnects Apr. 29, 1997
5620920 Process for fabricating a CMOS structure with ESD protection Apr. 15, 1997
5578504 Method for determination of resistivity of N-type silicon epitaxial layer Nov. 26, 1996
5563100 Fabrication method of semiconductor device with refractory metal silicide formation by removing native oxide in hydrogen Oct. 8, 1996
5506167 Method of making a high resistance drain junction resistor in a SRAM Apr. 9, 1996
5494845 Method of fabrication of bilayer thin film resistor Feb. 27, 1996
5489547 Method of fabricating semiconductor device having polysilicon resistor with low temperature coefficient Feb. 6, 1996
5468974 Control and modification of dopant distribution and activation in polysilicon Nov. 21, 1995
5320977 Method and apparatus for selecting the resistivity of epitaxial layers in III-V devices Jun. 14, 1994
5308789 Method of preparing diffused silicon device substrate May. 3, 1994
5302552 Method of manufacturing a semiconductor device whereby a self-aligned cobalt or nickel silicide is formed Apr. 12, 1994
5268330 Process for improving sheet resistance of an integrated circuit device gate Dec. 7, 1993
5232865 Method of fabricating vertically integrated oxygen-implanted polysilicon resistor Aug. 3, 1993
5217907 Array spreading resistance probe (ASRP) method for profile extraction from semiconductor chips of cellular construction Jun. 8, 1993
5173443 Method of manufacture of optically transparent electrically conductive semiconductor windows Dec. 22, 1992
5169806 Method of making amorphous deposited polycrystalline silicon thermal ink jet transducers Dec. 8, 1992
5158909 Method of fabricating a high voltage, high speed Schottky semiconductor device Oct. 27, 1992
5112774 Method of fabricating a high-voltage semiconductor device having a rectifying barrier May. 12, 1992
5110758 Method of heat augmented resistor trimming May. 5, 1992
5082792 Forming a physical structure on an integrated circuit device and determining its size by measurement of resistance Jan. 21, 1992
5051376 Method for producing semiconductor device and semiconductor device produced thereby Sep. 24, 1991
5023201 Selective deposition of tungsten on TiSi.sub.2 Jun. 11, 1991
5013690 Method for deposition of silicon films from azidosilane sources May. 7, 1991
4999315 Method of controlling dopant incorporation in high resistivity In-based compound Group III-V epitaxial layers Mar. 12, 1991
4965214 Method for manufacturing poly-crystal sillicon having high resistance Oct. 23, 1990
4916507 Polysilicon resistor implanted with rare gas Apr. 10, 1990
4891201 Ultra-pure epitaxial silicon Jan. 2, 1990
4835118 Non-destructive energy beam activated conductive links May. 30, 1989
4762801 Method of fabricating polycrystalline silicon resistors having desired temperature coefficients Aug. 9, 1988
4755480 Method of making a silicon nitride resistor using plasma enhanced chemical vapor deposition Jul. 5, 1988
4740481 Method of preventing hillock formation in polysilicon layer by oxygen implanation Apr. 26, 1988
4722913 Doped semiconductor vias to contacts Feb. 2, 1988
4716130 MOCVD of semi-insulating indium phosphide based compositions Dec. 29, 1987
4579601 Method of growing a resistive epitaxial layer on a short lifetime epi-layer Apr. 1, 1986
4561907 Process for forming low sheet resistance polysilicon having anisotropic etch characteristics Dec. 31, 1985
4560583 Resistor design system Dec. 24, 1985
4489104 Polycrystalline silicon resistor having limited lateral diffusion Dec. 18, 1984
4462150 Method of forming energy beam activated conductive regions between circuit elements Jul. 31, 1984
4394191 Stacked polycrystalline silicon film of high and low conductivity layers Jul. 19, 1983

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