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Class Information
Number: 438/933
Name: Semiconductor device manufacturing: process > Germanium or silicon or ge-si on iii-v
Description: Art collection involving the formation of a hetero-interface between germanium or silicon or an alloy thereof with a III-V compound semiconductor.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 8609518 |
Re-growing source/drain regions from un-relaxed silicon layer |
Dec. 17, 2013 |
| 8536621 |
Quantum-well-based semiconductor devices |
Sep. 17, 2013 |
| 8502284 |
Semiconductor device and method of manufacturing semiconductor device |
Aug. 6, 2013 |
| 8399878 |
Silicon/germanium oxide particle inks and processes for forming solar cell components and for forming optical components |
Mar. 19, 2013 |
| 8373058 |
Solar cell and method of adjusting color of the same |
Feb. 12, 2013 |
| 8278686 |
Structure and method for forming planar gate field effect transistor with low resistance channel region |
Oct. 2, 2012 |
| 8263423 |
Silicon/germanium oxide particle inks and processes for forming solar cell components and for forming optical components |
Sep. 11, 2012 |
| 8258543 |
Quantum-well-based semiconductor devices |
Sep. 4, 2012 |
| 8247284 |
Manufacture of semiconductor device with stress structure |
Aug. 21, 2012 |
| 8247283 |
Manufacture of semiconductor device with stress structure |
Aug. 21, 2012 |
| 8232581 |
Method for manufacturing an III-V engineered substrate and the III-V engineered substrate thereof |
Jul. 31, 2012 |
| 8232191 |
Semiconductor device manufacturing method |
Jul. 31, 2012 |
| 8222657 |
Light emitting apparatus |
Jul. 17, 2012 |
| 8207523 |
Metal oxide semiconductor field effect transistor with strained source/drain extension layer |
Jun. 26, 2012 |
| 8120060 |
Monolithically integrated silicon and III-V electronics |
Feb. 21, 2012 |
| 8093143 |
Method for producing a wafer comprising a silicon single crystal substrate having a front and a back side and a layer of SiGe deposited on the front side |
Jan. 10, 2012 |
| 8071435 |
Manufacture of semiconductor device with stress structure |
Dec. 6, 2011 |
| 8063413 |
Tensile strained GE for electronic and optoelectronic applications |
Nov. 22, 2011 |
| 8043980 |
Methods for making and using halosilylgermanes |
Oct. 25, 2011 |
| 8039880 |
High performance microwave switching devices and circuits |
Oct. 18, 2011 |
| 8034208 |
Deformation moderation method |
Oct. 11, 2011 |
| 8017504 |
Transistor having a high-k metal gate stack and a compressively stressed channel |
Sep. 13, 2011 |
| 7998835 |
Strain-direct-on-insulator (SDOI) substrate and method of forming |
Aug. 16, 2011 |
| 7993947 |
Silicon/germanium oxide particle inks, inkjet printing and processes for doping semiconductor substrates |
Aug. 9, 2011 |
| 7989926 |
Semiconductor device including non-stoichiometric silicon carbide layer and method of fabrication thereof |
Aug. 2, 2011 |
| 7968909 |
Reconditioned substrates for fabricating compound material wafers |
Jun. 28, 2011 |
| 7960794 |
Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow |
Jun. 14, 2011 |
| 7928017 |
Method of forming nanowire and method of manufacturing semiconductor device comprising the nanowire |
Apr. 19, 2011 |
| 7927956 |
Method for making a semiconductor structure using silicon germanium |
Apr. 19, 2011 |
| 7910468 |
Methods and compositions for preparing Ge/Si semiconductor substrates |
Mar. 22, 2011 |
| 7906439 |
Method of fabricating a MEMS/NEMS electromechanical component |
Mar. 15, 2011 |
| 7883979 |
Method for manufacturing a semiconductor device with reduced floating body effect |
Feb. 8, 2011 |
| 7863650 |
Multilayer structure and fabrication thereof |
Jan. 4, 2011 |
| 7825493 |
Field-effect transistor and method for fabricating the same |
Nov. 2, 2010 |
| 7811913 |
Method of fabricating a low, dark-current germanium-on-silicon pin photo detector |
Oct. 12, 2010 |
| 7790566 |
Semiconductor surface treatment for epitaxial growth |
Sep. 7, 2010 |
| 7767541 |
Methods for forming germanium-on-insulator semiconductor structures using a porous layer and semiconductor structures formed by these methods |
Aug. 3, 2010 |
| 7749847 |
CMOS integration scheme employing a silicide electrode and a silicide-germanide alloy electrode |
Jul. 6, 2010 |
| 7732308 |
Process for depositing layers containing silicon and germanium |
Jun. 8, 2010 |
| 7732336 |
Shallow trench isolation process and structure with minimized strained silicon consumption |
Jun. 8, 2010 |
| 7700941 |
Surface-emitting semiconductor laser comprising a structured waveguide |
Apr. 20, 2010 |
| 7682952 |
Method for forming low defect density alloy graded layers and structure containing such layers |
Mar. 23, 2010 |
| 7674669 |
FIN field effect transistor |
Mar. 9, 2010 |
| 7642197 |
Method to improve performance of secondary active components in an esige CMOS technology |
Jan. 5, 2010 |
| 7611974 |
Multilayer structure and fabrication thereof |
Nov. 3, 2009 |
| 7592619 |
Epitaxy layer and method of forming the same |
Sep. 22, 2009 |
| 7592213 |
Tensile strained NMOS transistor using group III-N source/drain regions |
Sep. 22, 2009 |
| 7553774 |
Method of fabricating semiconductor optical device |
Jun. 30, 2009 |
| 7554138 |
Method of manufacturing a strained semiconductor layer, method of manufacturing a semiconductor device and semiconductor substrate suitable for use in such a method including having a thin del |
Jun. 30, 2009 |
| 7544585 |
Structure of strained silicon on insulator and method of manufacturing the same |
Jun. 9, 2009 |
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