 |
|
 |
| |
 |
|
Class Information
Number: 438/933
Name: Semiconductor device manufacturing: process > Germanium or silicon or ge-si on iii-v
Description: Art collection involving the formation of a hetero-interface between germanium or silicon or an alloy thereof with a III-V compound semiconductor.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7611974 |
Multilayer structure and fabrication thereof |
Nov. 3, 2009 |
| 7592619 |
Epitaxy layer and method of forming the same |
Sep. 22, 2009 |
| 7592213 |
Tensile strained NMOS transistor using group III-N source/drain regions |
Sep. 22, 2009 |
| 7554138 |
Method of manufacturing a strained semiconductor layer, method of manufacturing a semiconductor device and semiconductor substrate suitable for use in such a method including having a thin del |
Jun. 30, 2009 |
| 7553774 |
Method of fabricating semiconductor optical device |
Jun. 30, 2009 |
| 7544585 |
Structure of strained silicon on insulator and method of manufacturing the same |
Jun. 9, 2009 |
| 7521365 |
Selective epitaxy process with alternating gas supply |
Apr. 21, 2009 |
| 7510932 |
Semiconductor devices having a field effect transistor and methods of fabricating the same |
Mar. 31, 2009 |
| 7501329 |
Wafer gettering using relaxed silicon germanium epitaxial proximity layers |
Mar. 10, 2009 |
| 7501331 |
Low-temperature metal-induced crystallization of silicon-germanium films |
Mar. 10, 2009 |
| 7498229 |
Transistor and in-situ fabrication process |
Mar. 3, 2009 |
| 7495250 |
Integrated circuit structures having a boron- and carbon-doped etch-stop and methods, devices and systems related thereto |
Feb. 24, 2009 |
| 7491612 |
Field effect transistor with a heterostructure and associated production method |
Feb. 17, 2009 |
| 7470580 |
Fabrication method of a semiconductor device |
Dec. 30, 2008 |
| 7470972 |
Complementary metal oxide semiconductor integrated circuit using uniaxial compressive stress and biaxial compressive stress |
Dec. 30, 2008 |
| 7442657 |
Producing stress-relaxed crystalline layer on a substrate |
Oct. 28, 2008 |
| 7435605 |
Method for fabricating a component having an electrical contact region |
Oct. 14, 2008 |
| 7432559 |
Silicide formation on SiGe |
Oct. 7, 2008 |
| 7393735 |
Structure for and method of fabricating a high-mobility field-effect transistor |
Jul. 1, 2008 |
| 7378305 |
Semiconductor integrated circuit and fabrication process thereof |
May. 27, 2008 |
| 7361574 |
Single-crystal silicon-on-glass from film transfer |
Apr. 22, 2008 |
| 7358112 |
Method of growing a semiconductor layer |
Apr. 15, 2008 |
| 7348284 |
Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow |
Mar. 25, 2008 |
| 7344933 |
Method of forming device having a raised extension region |
Mar. 18, 2008 |
| 7338886 |
Implantation-less approach to fabricating strained semiconductor on isolation wafers |
Mar. 4, 2008 |
| 7327036 |
Method for depositing a group III-nitride material on a silicon substrate and device therefor |
Feb. 5, 2008 |
| 7256107 |
Damascene process for use in fabricating semiconductor structures having micro/nano gaps |
Aug. 14, 2007 |
| 7241670 |
Method to form relaxed SiGe layer with high Ge content using co-implantation of silicon with boron or helium and hydrogen |
Jul. 10, 2007 |
| 7238622 |
Wafer bonded virtual substrate and method for forming the same |
Jul. 3, 2007 |
| 7232737 |
Treatment of a removed layer of silicon-germanium |
Jun. 19, 2007 |
| 7229865 |
Methods of making semiconductor-on-insulator thin film transistor constructions |
Jun. 12, 2007 |
| 7220632 |
Method of forming a semiconductor device and an optical device and structure thereof |
May. 22, 2007 |
| 7211521 |
Capping layer for crystallizing germanium, and substrate having thin crystallized germanium layer |
May. 1, 2007 |
| 7208357 |
Template layer formation |
Apr. 24, 2007 |
| 7202122 |
Cobalt silicidation process for substrates with a silicon--germanium layer |
Apr. 10, 2007 |
| 7202503 |
III-V and II-VI compounds as template materials for growing germanium containing film on silicon |
Apr. 10, 2007 |
| 7199015 |
Rare earth-oxides, rare earth-nitrides, rare earth-phosphides and ternary alloys with silicon |
Apr. 3, 2007 |
| 7192868 |
Method of obtaining release-standing micro structures and devices by selective etch removal of protective and sacrificial layer using the same |
Mar. 20, 2007 |
| 7186664 |
Methods and structures for metal interconnections in integrated circuits |
Mar. 6, 2007 |
| 7179727 |
Formation of lattice-tuning semiconductor substrates |
Feb. 20, 2007 |
| 7169226 |
Defect reduction by oxidation of silicon |
Jan. 30, 2007 |
| 7163854 |
Fabrication method of a semiconductor device |
Jan. 16, 2007 |
| 7163903 |
Method for making a semiconductor structure using silicon germanium |
Jan. 16, 2007 |
| 7148130 |
Semiconductor device and method of manufacturing the same |
Dec. 12, 2006 |
| 7148096 |
Method of manufacturing a semiconductor device having a gate electrode containing polycrystalline silicon-germanium |
Dec. 12, 2006 |
| 7138650 |
Semiconductor substrate, field-effect transistor, and their manufacturing method of the same |
Nov. 21, 2006 |
| 7129168 |
Method of estimating substrate temperature |
Oct. 31, 2006 |
| 7094671 |
Transistor with shallow germanium implantation region in channel |
Aug. 22, 2006 |
| 7081410 |
Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization |
Jul. 25, 2006 |
| 7078300 |
Thin germanium oxynitride gate dielectric for germanium-based devices |
Jul. 18, 2006 |
|
|
|
 |
|
 |
|
| |
Randomly Featured Patents |
|
