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Class Information
Number: 438/932
Name: Semiconductor device manufacturing: process > Boron nitride semiconductor
Description: Art collection involving the use of semiconducting boron nitride in semiconductor manufacture.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7470611 |
In situ deposition of a low K dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application |
Dec. 30, 2008 |
| 7459718 |
Field effect transistor |
Dec. 2, 2008 |
| 7101779 |
Method of forming barrier layers |
Sep. 5, 2006 |
| 7056842 |
Method and apparatus for non-aggressive plasma-enhanced vapor deposition of dielectric films |
Jun. 6, 2006 |
| 6960537 |
Incorporation of nitrogen into high k dielectric film |
Nov. 1, 2005 |
| 6617668 |
Methods and devices using group III nitride compound semiconductor |
Sep. 9, 2003 |
| 5624853 |
Method for forming heterojunction bipolar transistors |
Apr. 29, 1997 |
| 5476812 |
Semiconductor heterojunction structure |
Dec. 19, 1995 |
| 5444017 |
Method of making cBN semiconductor device having an ohmic electrode |
Aug. 22, 1995 |
| 5326424 |
Cubic boron nitride phosphide films |
Jul. 5, 1994 |
| 5298461 |
Method of forming ohmic contact electrodes for n-type semiconductor cubic boron nitride |
Mar. 29, 1994 |
| 5227318 |
Method of making a cubic boron nitride bipolar transistor |
Jul. 13, 1993 |
| 5225367 |
Method for manufacturing an electronic device |
Jul. 6, 1993 |
| 5196366 |
Method of manufacturing electric devices |
Mar. 23, 1993 |
| 5145741 |
Converting ceramic materials to electrical conductors and semiconductors |
Sep. 8, 1992 |
| 5139970 |
Electric device and manufacturing method of the same |
Aug. 18, 1992 |
| 5081053 |
Method for forming a transistor having cubic boron nitride layer |
Jan. 14, 1992 |
| 5057454 |
Process for producing ohmic electrode for p-type cubic system boron nitride |
Oct. 15, 1991 |
| 5011790 |
Method of manufacturing cubic boron nitride p-n junction body |
Apr. 30, 1991 |
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