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Class Information
Number: 438/931
Name: Semiconductor device manufacturing: process > Silicon carbide semiconductor
Description: Art collection involving the use of semiconducting silicon carbide in semiconductor manufacture.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7618884 |
Method and device with durable contact on silicon carbide |
Nov. 17, 2009 |
| 7615849 |
Semiconductor device and manufacturing method thereof |
Nov. 10, 2009 |
| 7598134 |
Memory device forming methods |
Oct. 6, 2009 |
| 7572741 |
Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen |
Aug. 11, 2009 |
| 7569496 |
Method for manufacturing SiC semiconductor device |
Aug. 4, 2009 |
| 7556977 |
Semiconductor manufacturing method and semiconductor laser device manufacturing method |
Jul. 7, 2009 |
| 7547578 |
Methods of processing semiconductor wafers having silicon carbide power devices thereon |
Jun. 16, 2009 |
| 7544611 |
Method of manufacturing III-V nitride semiconductor device |
Jun. 9, 2009 |
| 7541300 |
Silicon carbide semiconductor device and method for manufacturing the same |
Jun. 2, 2009 |
| 7538353 |
Composite barrier/etch stop layer comprising oxygen doped SiC and SiC for interconnect structures |
May. 26, 2009 |
| 7531433 |
Homoepitaxial growth of SiC on low off-axis SiC wafers |
May. 12, 2009 |
| 7531891 |
Semiconductor device |
May. 12, 2009 |
| 7528040 |
Methods of fabricating silicon carbide devices having smooth channels |
May. 5, 2009 |
| 7507999 |
Semiconductor device and method for manufacturing same |
Mar. 24, 2009 |
| 7498273 |
Formation of high quality dielectric films of silicon dioxide for STI: usage of different siloxane-based precursors for harp II--remote plasma enhanced deposition processes |
Mar. 3, 2009 |
| 7488692 |
Etching of substrates of light emitting devices |
Feb. 10, 2009 |
| 7488984 |
Doping of SiC structures and methods associated with same |
Feb. 10, 2009 |
| 7482068 |
Lightly doped silicon carbide wafer and use thereof in high power devices |
Jan. 27, 2009 |
| 7476594 |
Methods of fabricating silicon nitride regions in silicon carbide and resulting structures |
Jan. 13, 2009 |
| 7470611 |
In situ deposition of a low K dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application |
Dec. 30, 2008 |
| 7432171 |
Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications |
Oct. 7, 2008 |
| 7407837 |
Method of manufacturing silicon carbide semiconductor device |
Aug. 5, 2008 |
| 7396410 |
Featuring forming methods to reduce stacking fault nucleation sites |
Jul. 8, 2008 |
| 7381992 |
Silicon carbide power devices with self-aligned source and well regions |
Jun. 3, 2008 |
| 7372087 |
Semiconductor structure for use in a static induction transistor having improved gate-to-drain breakdown voltage |
May. 13, 2008 |
| 7329606 |
Semiconductor device having nanowire contact structures and method for its fabrication |
Feb. 12, 2008 |
| 7282438 |
Low-k SiC copper diffusion barrier films |
Oct. 16, 2007 |
| 7279115 |
Method to reduce stacking fault nucleation sites and reduce V.sub.f drift in bipolar devices |
Oct. 9, 2007 |
| 7247513 |
Dissociation of silicon clusters in a gas phase during chemical vapor deposition homo-epitaxial growth of silicon carbide |
Jul. 24, 2007 |
| 7247550 |
Silicon carbide-based device contact and contact fabrication method |
Jul. 24, 2007 |
| 7235438 |
Inclusion of nitrogen at the silicon dioxide-silicon carbide interface for passivation of interface defects |
Jun. 26, 2007 |
| 7226805 |
Sequential lithographic methods to reduce stacking fault nucleation sites |
Jun. 5, 2007 |
| 7189643 |
Semiconductor device and method of fabricating the same |
Mar. 13, 2007 |
| 7189658 |
Strengthening the interface between dielectric layers and barrier layers with an oxide layer of varying composition profile |
Mar. 13, 2007 |
| 7173284 |
Silicon carbide semiconductor device and manufacturing method |
Feb. 6, 2007 |
| 7173285 |
Lithographic methods to reduce stacking fault nucleation sites |
Feb. 6, 2007 |
| 7166894 |
Schottky power diode with SiCOI substrate and process for making such diode |
Jan. 23, 2007 |
| 7163882 |
Formulation and fabrication of an improved Ni based composite Ohmic contact to n-SiC for high temperature and high power device applications |
Jan. 16, 2007 |
| 7138291 |
Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices |
Nov. 21, 2006 |
| 7135359 |
Manufacturing methods for large area silicon carbide devices |
Nov. 14, 2006 |
| 7129129 |
Vertical device with optimal trench shape |
Oct. 31, 2006 |
| 7118970 |
Methods of fabricating silicon carbide devices with hybrid well regions |
Oct. 10, 2006 |
| 7105875 |
Lateral power diodes |
Sep. 12, 2006 |
| 7078329 |
Method of manufacturing silicon carbide semiconductor device |
Jul. 18, 2006 |
| 7074643 |
Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same |
Jul. 11, 2006 |
| 7060620 |
Method of preparing a surface of a semiconductor wafer to make it epiready |
Jun. 13, 2006 |
| 7061021 |
System and method for fabricating diodes |
Jun. 13, 2006 |
| 7052932 |
Oxygen doped SiC for Cu barrier and etch stop layer in dual damascene fabrication |
May. 30, 2006 |
| 7033950 |
Graded junction termination extensions for electronic devices |
Apr. 25, 2006 |
| 7022545 |
Production method of SiC monitor wafer |
Apr. 4, 2006 |
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