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Class Information
Number: 438/925
Name: Semiconductor device manufacturing: process > Doping > Fluid growth doping control (e.g., delta doping, etc.)
Description: Art collection under 914 involving regulating the dopant concentration during the fluid growth of material upon the substrate.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8587061 Power MOSFET device with self-aligned integrated Schottky diode Nov. 19, 2013
8252648 Power MOSFET device with self-aligned integrated Schottky and its manufacturing method Aug. 28, 2012
7531456 Method of forming self-aligned double pattern May. 12, 2009
7459366 High-voltage vertical transistor with a multi-gradient drain doping profile Dec. 2, 2008
6905963 Fabrication of B-doped silicon film by LPCVD method using BCI3 and SiH4 gases Jun. 14, 2005
6660615 Method and apparatus for growing layer on one surface of wafer Dec. 9, 2003
6180470 FETs having lightly doped drain regions that are shaped with counter and noncounter dorant elements Jan. 30, 2001
6096617 Method of manufacturing a carbon-doped compound semiconductor layer Aug. 1, 2000
6078845 Apparatus for carrying semiconductor devices Jun. 20, 2000
6036772 Method for making semiconductor device Mar. 14, 2000
5937273 Fabricating compound semiconductor by varying ratio of stagnant layer thickness and mean free path of seed material Aug. 10, 1999
5789030 Method for depositing doped amorphous or polycrystalline silicon on a substrate Aug. 4, 1998
5756374 Compound semiconductor light emitting device and method of preparing the same May. 26, 1998
5709745 Compound semi-conductors and controlled doping thereof Jan. 20, 1998
5656540 Semiconductor crystal growing method Aug. 12, 1997
5656076 Method for growing III-V group compound semiconductor crystal Aug. 12, 1997
5654230 Method of forming doped film Aug. 5, 1997
5597740 Semiconductor display device and a method of fabricating the same Jan. 28, 1997
5597761 Semiconductor light emitting device and methods of manufacturing it Jan. 28, 1997
5585306 Methods for producing compound semiconductor devices Dec. 17, 1996
5580818 Fabrication process for semiconductor optical device Dec. 3, 1996
5573976 Method of fabricating semiconductor laser Nov. 12, 1996
5499599 Method for continuous control of composition and doping of pulsed laser deposited films by pressure control Mar. 19, 1996
5498568 Method of producing a compound semiconductor crystal layer with a steep heterointerface Mar. 12, 1996
5463978 Compound semiconductor and controlled doping thereof Nov. 7, 1995
5458085 Magnesium-doping in III-V compound semiconductor Oct. 17, 1995
5415128 Rotation induced superlattice May. 16, 1995
5387544 Method of making a semiconductor device including carbon as a dopant Feb. 7, 1995
5372658 Disordered crystalline semiconductor Dec. 13, 1994
5332689 Method for depositing low bulk resistivity doped films Jul. 26, 1994
5322808 Method of fabricating inverted modulation-doped heterostructure Jun. 21, 1994
5316958 Method of dopant enhancement in an epitaxial silicon layer by using germanium May. 31, 1994
5298452 Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers Mar. 29, 1994
5298108 Serpentine superlattice methods and devices Mar. 29, 1994
5294286 Process for forming a thin film of silicon Mar. 15, 1994
5284782 Process for formation of delta-doped quantum well field effect transistor Feb. 8, 1994
5281551 Method for delta-doping in GaAs epitaxial layer grown on silicon substrate by metalorganic chemical vapor deposition Jan. 25, 1994
5275966 Low temperature process for producing antimony-containing semiconductor materials Jan. 4, 1994
5273931 Method of growing epitaxial layers of N-doped II-VI semiconductor compounds Dec. 28, 1993
5273933 Vapor phase growth method of forming film in process of manufacturing semiconductor device Dec. 28, 1993
5266127 Epitaxial process for III-V compound semiconductor Nov. 30, 1993
5248631 Doping of IIB-VIA semiconductors during molecular beam epitaxy using neutral free radicals Sep. 28, 1993
5244829 Organometallic vapor-phase epitaxy process using (CH.sub.3).sub.3 As and CCl.sub.4 for improving stability of carbon-doped GaAs Sep. 14, 1993
5225378 Method of forming a phosphorus doped silicon film Jul. 6, 1993
5215938 Process to obtain semi-insulating single crystalline epitaxial layers of arsenides and phosphides of metals of the group III of the periodic table useful to make electronic devices Jun. 1, 1993
5213995 Method of making an article comprising a periodic heteroepitaxial semiconductor structure May. 25, 1993
5210051 High efficiency light emitting diodes from bipolar gallium nitride May. 11, 1993
5202283 Technique for doping MOCVD grown crystalline materials using free radical transport of the dopant species Apr. 13, 1993
5180692 Method for the manufacture of boron-containing films by CVD or epitaxial techniques using boron trifluoride Jan. 19, 1993
5116455 Process of making strain-free, carbon-doped epitaxial layers and products so made May. 26, 1992

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