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Class Information
Number: 438/923
Name: Semiconductor device manufacturing: process > Doping > Diffusion through a layer
Description: Art collection under 914 involving diffusing a dopant in a perpendicular manner through a layer of material.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8324099 Method of fabricating a landing plug in a semiconductor device Dec. 4, 2012
8129292 Integrated circuit arrangement with shockley diode or thyristor and method for production and use of a thyristor Mar. 6, 2012
8110501 Method of fabricating landing plug with varied doping concentration in semiconductor device Feb. 7, 2012
7713808 CMOS image sensor and method for fabricating the same May. 11, 2010
7485552 Thin film transistor and method of fabricating the same Feb. 3, 2009
7435669 Method of fabricating transistor in semiconductor device Oct. 14, 2008
7265039 Method for fabricating semiconductor device with improved refresh time Sep. 4, 2007
7157357 Methods of forming halo regions in NMOS transistors Jan. 2, 2007
6958257 Tantalum sputtering target and method of manufacture Oct. 25, 2005
6955958 Method of manufacturing a semiconductor device Oct. 18, 2005
6951806 Metal region for reduction of capacitive coupling between signal lines Oct. 4, 2005
6921709 Front side seal to prevent germanium outgassing Jul. 26, 2005
6849529 Deep-trench capacitor with hemispherical grain silicon surface and method for making the same Feb. 1, 2005
6809016 Diffusion stop implants to suppress as punch-through in SiGe Oct. 26, 2004
6797596 Sacrificial deposition layer as screening material for implants into a wafer during the manufacture of a semiconductor device Sep. 28, 2004
6794277 Method of doping semiconductor layer, method of manufacturing thin film semiconductor device, and thin film semiconductor device Sep. 21, 2004
6762099 Method for fabricating buried strap out-diffusions of vertical transistor Jul. 13, 2004
6695903 Dopant pastes for the production of p, p+, and n, n+ regions in semiconductors Feb. 24, 2004
6645839 Method for improving a doping profile for gas phase doping Nov. 11, 2003
6518113 Doping of thin amorphous silicon work function control layers of MOS gate electrodes Feb. 11, 2003
6498079 Method for selective source diffusion Dec. 24, 2002
6489209 Manufacturing method of LDD-type MOSFET Dec. 3, 2002
6461902 RF LDMOS on partial SOI substrate Oct. 8, 2002
6448105 Method for doping one side of a semiconductor body Sep. 10, 2002
6436772 Method of manufacturing semiconductor device having memory cell transistors Aug. 20, 2002
6410378 Method of fabrication of semiconductor structures by ion implantation Jun. 25, 2002
6391733 Method of doping semiconductor devices through a layer of dielectric material May. 21, 2002
6362508 Triple layer pre-metal dielectric structure for CMOS memory devices Mar. 26, 2002
6303436 Method for fabricating a type of trench mask ROM cell Oct. 16, 2001
6294430 Nitridization of the pre-ddi screen oxide Sep. 25, 2001
6255183 Manufacture of a semiconductor device with a MOS transistor having an LDD structure using SiGe spacers Jul. 3, 2001
6184050 Method for forming a photodiode Feb. 6, 2001
6159809 Method for manufacturing surface channel type P-channel MOS transistor while suppressing P-type impurity penetration Dec. 12, 2000
6153470 Floating gate engineering to improve tunnel oxide reliability for flash memory devices Nov. 28, 2000
6107169 Method for fabricating a doped polysilicon feature in a semiconductor device Aug. 22, 2000
6096599 Formation of junctions by diffusion from a doped film into and through a silicide during silicidation Aug. 1, 2000
6093648 Production method for a discrete structure substrate Jul. 25, 2000
6060745 Semiconductor device having a monotonically decreasing impurity concentration May. 9, 2000
6051440 Method of fabricating a low-inductance in-line resistor for superconductor integrated circuits Apr. 18, 2000
5789295 Method of eliminating or reducing poly1 oxidation at stacked gate edge in flash EPROM process Aug. 4, 1998
5712208 Methods of formation of semiconductor composite gate dielectric having multiple incorporated atomic dopants Jan. 27, 1998
5646073 Process for selective deposition of polysilicon over single crystal silicon substrate and resulting product Jul. 8, 1997
5629221 Process for suppressing boron penetration in BF.sub.2 .sup.+ -implanted P.sup.+ -poly-Si gate using inductively-coupled nitrogen plasma May. 13, 1997
5569624 Method for shallow junction formation Oct. 29, 1996
5476799 Process for preparing semiconductor device using a tunnel oxidized layer Dec. 19, 1995
5407847 Method for fabricating a semiconductor device having a shallow doped region Apr. 18, 1995
5354710 Method of manufacturing semiconductor devices using an adsorption enhancement layer Oct. 11, 1994
5324684 Gas phase doping of semiconductor material in a cold-wall radiantly heated reactor under reduced pressure Jun. 28, 1994
5273934 Method for producing a doped region in a substrate Dec. 28, 1993
5272108 Method of manufacturing gallium nitride semiconductor light-emitting device Dec. 21, 1993

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