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Class Information
Number: 438/920
Name: Semiconductor device manufacturing: process > Doping > Controlling diffusion profile by oxidation
Description: Art collection under 914 involving the regulation of a diffusion contour by an oxidation step.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8168467 Solar cell method of fabrication via float glass process May. 1, 2012
8148192 Transparent solar cell method of fabrication via float glass process Apr. 3, 2012
7846822 Methods for controlling dopant concentration and activation in semiconductor structures Dec. 7, 2010
6987054 Method of fabricating a semiconductor device having a groove formed in a resin layer Jan. 17, 2006
6855994 Multiple-thickness gate oxide formed by oxygen implantation Feb. 15, 2005
6756290 Method for the production of a semiconductor device Jun. 29, 2004
6730566 Method for non-thermally nitrided gate formation for high voltage devices May. 4, 2004
6660569 Method for producing a power semiconductor device with a stop zone Dec. 9, 2003
6555484 Method for controlling the oxidation of implanted silicon Apr. 29, 2003
6218270 Method of manufacturing semiconductor device having shallow junction Apr. 17, 2001
6057216 Low temperature diffusion process for dopant concentration enhancement May. 2, 2000
5854120 Semiconductor device manufacturing method Dec. 29, 1998
5728624 Bonded wafer processing Mar. 17, 1998
5691212 MOS device structure and integration method Nov. 25, 1997
5648282 Autodoping prevention and oxide layer formation apparatus Jul. 15, 1997
5643810 Methods of forming BiCMOS semiconductor devices Jul. 1, 1997
5578502 Photovoltaic cell manufacturing process Nov. 26, 1996
5506169 Method for reducing lateral dopant diffusion Apr. 9, 1996
5308789 Method of preparing diffused silicon device substrate May. 3, 1994
5278095 Method for making passivated mesa semiconductor Jan. 11, 1994
5219783 Method of making semiconductor well structure Jun. 15, 1993
5188978 Controlled silicon doping of III-V compounds by thermal oxidation of silicon capping layer Feb. 23, 1993
5171708 Method of boron diffusion into semiconductor wafers having reduced stacking faults Dec. 15, 1992
4980315 Method of making a passivated P-N junction in mesa semiconductor structure Dec. 25, 1990
4960731 Method of making a power diode with high reverse voltage rating Oct. 2, 1990
4925806 Method for making a doped well in a semiconductor substrate May. 15, 1990
4897154 Post dry-etch cleaning method for restoring wafer properties Jan. 30, 1990
4806499 Method of manufacturing Bi-CMOS semiconductor IC devices using dopant rediffusion Feb. 21, 1989
4784964 EPI defect reduction using rapid thermal annealing Nov. 15, 1988
4761385 Forming a trench capacitor Aug. 2, 1988
4725564 Method of manufacturing a semiconductor device, in which a dopant is diffused from its oxide into a semiconductor body Feb. 16, 1988
4720469 Method for diffusing aluminum Jan. 19, 1988
4717687 Method for providing buried layer delineation Jan. 5, 1988
4682407 Means and method for stabilizing polycrystalline semiconductor layers Jul. 28, 1987
4514440 Spin-on dopant method Apr. 30, 1985
4472212 Method for fabricating a semiconductor device Sep. 18, 1984
4471524 Method for manufacturing an insulated gate field effect transistor device Sep. 18, 1984
4437897 Fabrication process for a shallow emitter/base transistor using same polycrystalline layer Mar. 20, 1984
RE31506 Method of manufacturing oxide isolated semiconductor device utilizing selective etching technique Jan. 24, 1984
4409726 Method of making well regions for CMOS devices Oct. 18, 1983
4403392 Method of manufacturing a semiconductor device Sep. 13, 1983
4306915 Method of making electrode wiring regions and impurity doped regions self-aligned therefrom Dec. 22, 1981
4301588 Consumable amorphous or polysilicon emitter process Nov. 24, 1981
4295266 Method of manufacturing bulk CMOS integrated circuits Oct. 20, 1981
4290830 Method of selectively diffusing aluminium into a silicon semiconductor substrate Sep. 22, 1981
4280854 Method of manufacturing a semiconductor device having conductive and insulating portions formed of a common material utilizing selective oxidation and angled ion-implantation Jul. 28, 1981
4274892 Dopant diffusion method of making semiconductor products Jun. 23, 1981
4263066 Process for concurrent formation of base diffusion and p.sup.+ profile from single source predeposition Apr. 21, 1981
4261765 Method of manufacturing a semiconductor device Apr. 14, 1981
4219373 Method of fabricating a semiconductor device Aug. 26, 1980

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